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期刊论文
Electrochemical cleavage of a Si-Si bond in polyw[tetraethyldisilanylene/oligo]2,5-thienylene/x films
Synthetic Metals 98 1998. 79-81，-0001，（）：
Electrochemical stability of polywtetraethyldisilanylene.oligo2,5-thienylene.x DSmT; m refers to the number of thienylene units. films is investigated by means of in situ UV-vis-NIR spectroscopy, in situ and ex situ fluorescence spectroscopy, gel-permeation chromatography, and FT-IR spectroscopy. It is found that a Si-Si bond in DSmT film with ms3 to 5 is cleaved at potentials as low as 0.5 V versus AgrAgq in acetonitrile, resulting in dissolution of oligothiophene-like species. The decomposed products are oxidized to form another polymer film on the surface of an original DSmT film and a doping reaction observed earlier takes place on the composite polymer film. q1998 Elsevier Science S.A. All rights reserved.
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