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期刊论文
QUASINEUTRAL LIMIT OF THE DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS WITH GENERAL INITIAL DATA
Mathematical Models and Methods in Applied Sciences Vol. 13, No.4 (2003) 463-470，-0001，（）：
The limit for vanishing Debye length (charge neutral limit) in a bipolar drift-diffusion model for semiconductors with general initial data allowing the presence of an initial layer is studied. The quasineutral limit (zero-Debye-length limit) is performed rigorously by using two dierent entropy functionals which yield appropriate uniform estimates. This investigation extends the results of Refs. 7 and 8 for charge neutral initial data where no initial layer occurs
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