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王万录
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期刊论文
Plasma associated diamond nucleation on AlN in hot-filament chemical vapor deposition
Materials Letters 44(2000)336-340，-0001，（）：
Diamond films have been deposited on AlN substrates using hot filament chemical vapor deposition. By applying a negative bias voltage, a high diamond nucleation density on AlN substrates as high as 10 10 cm-2 has been realized. The appearance of bias current and plasma induced on the AlN surface was found critical for the enhancement of diamond nucleation density. Satisfactory adhesion of the deposited diamond films with the AlN substrates has been achieved for application purposes. q2000 Elsevier Science B.V. All rights reserved.
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