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【期刊论文】Wafer-level Hall Measurement on SiC MOSFET
盛况
【期刊论文】大功率半导体器件的发展与展望
【期刊论文】Modeling and Optimal Device Design for 4H-SiC Super-Junction Devices
【期刊论文】Modeling and Design of a Monolithically Integrated Power Converter on SiC
【期刊论文】Geometric Magnetoresistance Mobility Extraction in Highly Scaled Transistors
【期刊论文】1000-V 9.1- mΩ·cm2 Normally Off 4H-SiC Lateral RESURF JFET for Power Integrated Circuit Applications
【期刊论文】Development of 4H-SiC LJFET-Based Power IC
【期刊论文】Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments
【期刊论文】High temperature characterization of SiC BJTs for power switching applications
【期刊论文】High Frequency Switching of SiC High Voltage LJFET
【期刊论文】Demonstration of the first SiC power integrated circuit
【期刊论文】Rheology and Thermal Conductivity of Diamond Powder-Filled Liquid Epoxy Encapsulants for Electronic Packaging
【期刊论文】430-V 12.4- mΩ·cm2 Normally off 4H-SiC Lateral JFET
【期刊论文】New Methods for the Direct Extraction of Mobility and Series Resistance from a Single Ultra-Scaled Device
【期刊论文】Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices
【期刊论文】A vertical SiC JFET with a monolithically integrated JBS diode
【期刊论文】Design of High Temperature SiC LJFET-Based Logic Inverter and Integrated Gate Driver
【期刊论文】Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs
【期刊论文】1836 V, 4.7 mΩ·cm2 High Power 4H-SiC Bipolar Junction Transistor
【期刊论文】A fast, simple wafer-level Hall-mobility measurement technique
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