A theory for determining the heterogeneous stability constant of a metal complex system at the surface of a chemically modified carbon paste electrode was developed. The proposed theory has been applied to the studies of a copper(II)-humic acids (Has) complex system. In an open circuit, copper(II) was accumulated from a stirred preconcentration medium onto the HAs-CMCPE. The subsequent electrochemical measurement was performed in a small volume of Britton-Robinson (B-R) buffer (pH 3.78). By means of cyclic voltammetry (CV) and anodic stripping voltammetry (ASV), the determined average heterogeneous stability constant of copper(II)-HAs complex was 4.99

A novel method of silver electroless deposition on p-Si(100) wafer under the condition of the centrifugal force was developed. The Ag seed layer was firstly prepared on the wafer in a solution of 0.005 mol/l AgNO3+0.06 mol/l HF then the silver film was electrolessly deposited in another electroless Ag bath under the centrifugal fields. The morphology of the prepared silver film was characterized by atomic force microscopy. The crystal orientation of the film was characterized by X-ray diffraction. The experiment results show that the silver film obtained under the condition of the strong centrifugal force is smoother and denser.

The fabrication of Sn-Se compounds, at room temperature by electrochemical atomic layer epitaxy (EC-ALE) is reported. EC-ALE involves the use of surface limited reactions to forrn atomic layers of the elements making up a compound (Sn and Se) in a cycle. Cyclic voltammograms were used to determine approximate deposition potentials for each element. The amperometric I-t method and differential pulse anodic stripping voltammetry were used to deposit and study the processes involved in a continuous cycling deposition which were used to form thin films of the compound. Through the analysis of the I-t transients and the stripping voltammograms it is possible to establish the formation of Sn-Se compounds. Taking into account the charges involved in the I-t deposition process, a general reaction scheme that considers the formation of SnSe2, SnSe2-x and SnSe compounds is proposed.