Carbon films were deposited by r.f. magnetron sputtering on tungsten substrates followed by irradiating processes with nitrogen and argonions. Microanalyses were used to obtain information on the phase, composition and chemical states of elements in the samples. It is found that Ar+ ion irradiation did not lead to the formation of tungsten-carbide, while nitrogen ions bombardment can induce formation of WCx, and at the same time, can react with tungsten to form the WN phase. With alternating Ar+ and nitrogen ions, the carbon films on tungsten substrate were transformed into tungsten-carbide.

C-SiC films with different content of SiC were prepared with magnetron sputtering deposition followed by Ar+ion bombardment. Secondary ion mass spectroscopy depth profiles of hydrogen for the samples of C-SiC coated stainless steel and stainless steel substrate after H+ ion implantation and thermal annealing show different hydrogen concentrations in C-SiC coatings and stainless steel. Infrared (IR) transmission measurement was selected to study the mechanism of hydrogen retention by C-SiC films. The vibrational spectra in the range between 400 and 3200 cm-1 in IR transmission spectra show the Si-CH3, Si-CH2, Si-H, CH2, CH3 etc. bonds, which are responsible for retaining hydrogen. Apart from the mode above, there also exist bonds related to carbon and silicon such as Si-C, C=C. The contamination of oxygen entered the film to form C=O and SiO2 configurations and hydrogen contamination also formed Si-CH2 mode in the films