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2005年02月25日
陈培毅， MENG Xiangti )， WANG Ruipian )， KANG Aiguo)， WANG Jilin )， JIA Hongyong )， CHEN Peiyi )， and Peihsin Tsien )
RARE METALS Vol. 22, No.1, Mar 2003, p. 69，-0001，（）：
-1年11月30日
was studied as a function of reactor fast neutron radiation fluence. After neutron irradiation, the collector current Ic and the current gain β decrease, and the base current Ib increases generally for SiGe HBT. The higher the neutron irradiation fluence is, the larger Ib increases. For conventional Si BJT, Ic and Ib increase as well as β decreases much larger than SiGe HBT at the same fluence. It is shown that SiGe HBT has a larger anti-radiation threshold and better anti-radiation performance than Si BJT. The mechanism of performance changes induced by irradiation was preliminarily discussed.
semiconductor technology， SiGe HBT， neutron irradiation， Si BJT， electrical performance
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