Boron nitride (BN) crystals were synthesized from aqueous solutions by reaction coupling effect. The effects of white phosphor (P), ammonium chloride (NH4C1) and the reaction temperature on the yield and crystalline perfectness of BN crystals have been explored. The results showed that, the existence of P in the reaction mixture significantly increased the yield and perfectness of the BN crystals. BN crystals grew larger and more perfect when the temperature increased from 300℃ to 550℃.The yield and perfectness of BN can also be improved greatly by adding NH4C1 to the reaction mixture. The samples were characterized by powder X-ray diffraction (XRD), Fourier transformation infrared absorption spectrum (FTIR), Transmission electron spectroscopy (TEM) and Selective area electron diffraction (SAED).

Cubic BN (cBN) nanocrystals were synthesized by reacting BBr3 and Li3N at 480℃ and 10-20MPa. The temperature and pressure were much lower than that of previous processes. The sample was characterized by X-ray powder diffraction (XRD), electron diffraction (ED), Fourier transformation infrared spectroscopy (FTIR) and X-ray photoelectron spectra analysis (XPS) measurements. The results have showed that cBN, hBN and oBN (orthorhombic phase prepared by shock-wave compression, with a=0.86nm, b=0.774nm and c=6.35nm) coexist in the sample. But the cubic BN is the dominant phase, and this conclusion has been confirmed by both XRD and ED. Analysis of XPS spectra has showed that the average composition of the sample is about B1.1N1.0.

On behalf of all the authors, we want to express our thanks to Dr. Sachdev, because he has wrote a comment on the paper "synthesis of cubic boron nitride at low temperature and low pressure conditions". We have learned very much from Dr. Sachdev's comment (referred as "comment" in this article), and find some negligences in our above mentioned paper (referred as "paper" in this article). But Dr. Sachdev also made some obvious mistakes in the "comment", the detailed analysis can be found in the following article.

InP and GaP nanocrystals were prepared by the reaction of yellow phosphorus with indium and gallium metal in benzene. The samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and selected area electron diffraction (SAED) measurements. The self-assembly phenomenon of InP and GaP nanocrystals was observed. Compared to the other methods, our synthesis route is very simple and the products are less contaminated.