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【期刊论文】Why can CuInSe2 be readily equilibrium-doped n-type but the wider-gap CuGaSe2 cannot?
赵宇军, Yu-Jun Zhao, Clas Persson, a) Stephan Lany, and Alex Zungerb)
APPLIED PHYSICS LETTERS VOL.85 NO.24 (2004) 5860-5863,-0001,():
-1年11月30日
The wider-gap members of a semiconductor series such as diamond→Si→Ge or AlN→GaN→InN often cannot be doped n-type at equilibrium. We study theoretically if this is the case in the chalcopyrite family CuGaSe2→CuInSe2, finding that: (i) Bulk CuInSe2 (CIS, Eg=1.04 eV) can be doped at equilibrium n-type either by Cd or Cl, but bulk CuGaSe2 (CGS, Eg=1.68 eV) cannot; (ii) result (i) is primarily because the Cu-vacancy pins the Fermi level in CGS farther below the conduction band minimum than it does in CIS, as explained by the “doping limit rule; (iii) Cd doping is better than Cl doping, in that CdCu yields in CIS a higher net donor concentration than ClSe; and (iv) in general, the system shows massive compensation of acceptors (CdⅢ,VCu) and donors (ClSe,CdCu, InCud).
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