用高分辨电子显微学方法研究了Ni80Fe20/Mo磁性多层膜，结果表明：(1)多层膜的结晶状态，随Mo非磁性层厚度而变化。当Mo层厚度为0.7nm时，多层膜基本为非晶；当Mo层厚度大于116nm时，Mo层和NiFe层内分别结晶为体心立方和面心立方多晶，层内晶粒尺寸为2-6nm。(2)在Mo层厚度为1.6和2.1nm的多层膜中，NiFe层和Mo 层之间存在两种取向关系：(110) Mo∥(111) NiFe，[111]Mo∥[110]NiFe和（110）Mo∥（111）NiFe，[001 ]Mo ∥[ 110 ]NiFe(3) NiFe层和Mo层之间有较清晰的界面。界面附近3-4个原子层范围内，NiFe 和Mo 的面间距分别相对块状晶体沿生长方向膨胀和压缩。讨论了界面附近面间距的变化，并根据该多层膜显微结构特征，讨论了此系统未显示巨磁电阻效应的原因。

A coupling model of pluralistic magnetic component R-T intermetallic compounds (R denotes rare earth, T denotes transition metal) has been proposed by means of the mean-molecular-field analysis. Using the model, the Curie temperature T, of (Sm1-x,Prx)2 Fe17 compounds has been cpmpared with the experimental values. It is found that the former are consistent with the later.

SiC nanorods with 20-100 nm diameter and 10–100μm length were synthesized by reaction between SiO and amorphous activated carbon (AAC) at 1380℃. Microstructural characterization of the SiC nanorods was carried out by high resolution transmission electron microscopy (HRTEM) and energy dispersive spectroscopy (EDS). The SiC nanorods grow on either a chain or from facets of SiC nanoparticles. They are usually straight and preferentially orientated along the [111] direction. Branching phenomenon exists for these nanorods. Typical SiC nanorod tip was analyzed by HRTEM image and EDS analysis. Based on an experimental analysis, a formation mechanism is proposed to explain the microstructural characterization of the SiC nanorods.

Si3N4/SiC interface structure in SiC-nanocrystal-embedded a-Si3N4 nanorods was studied by high-resolution transmission electron microscopy. The SiC-nanocrystal-embedded a-Si3N4 nanorods were synthesized by the method of carbothermal reduction of SiO in pure N2 atmosphere, while the SiC nanocrystals were produced from a substitution of SiC for Si3N4. Between SiC and Si3N4, there are three kinds of plane configurations and a set of orientation relationships, i.e., Si3N4, and nearly (111)SiC//(1010)Si3N4 with low-angle discrepancy of either 3

Ge3N4 nanobelts 30-300 nm in width were synthesized by thermal reduction of a mixed Ge+SiO2 powder in NH3 atmosphere. These nanobelts were studied by high-resolution transmission electron microscope equipped with an x-ray energy dispersive spectrometer. In these synthesized nanobelts, the existence of α and β phases of Ge3N4 was identified. The a phase exhibiting slight difference from an ideal α-Ge3N4 phase was also found in the present Ge3N4 material. The mechanism of formation of the Ge3N4 nanobelts is discussed.