Large yield of β-Ga2O3 nanorods with metal Ga tip were efficiently synthesized. They were deposited on surface of amorphous C fibers by decomposition of Ga2O vapor at around 1000℃, where Ga2O vapor was produced at 1360℃ by a reaction between pure Ga2O3 and active carbon powders. The nanorods had diameters ranging from 10 to 100 nm and lengths of up to several tens micrometers. Twins and edge dislocations having a Burgers vector of 0.0859 Å @2.66, 3.66, 1] existed in the nanorods. A redshift of 4-23 cm-1 was found in the Raman scattering spectrum of nanorods compared with that of a pure Ga2O3 powder. This phenomenon was explained qualitatively in terms of the defects in the nanorods.

α-Si3N4 K15nanorods with 20-80 nm width were synthesized by carbothermal reduction of SiO with amorphous activated carbon (AAC) as a reductant. Microstructural characterization of the synthesized nanorods was carried out by high resolution transmission electron microscopy (HRTEM)and energy dispersive X-ray analysis. Many Si3N4 nanorods were found to be twisted. Each twisted nanorod contained several straight Si3N4 parts. The straight parts had the rod axes orientated along the〈1010〉direction, which is the closest packing direction of a-Si3N4. There were two kinds of joints between the two adjacent straight Si3N4 parts. Formation mechanism of the Si3N4 nanorods is discussed.

SiC nanorods with 20-100 nm diameter and 10–100μm length were synthesized by reaction between SiO and amorphous activated carbon (AAC) at 1380℃. Microstructural characterization of the SiC nanorods was carried out by high resolution transmission electron microscopy (HRTEM) and energy dispersive spectroscopy (EDS). The SiC nanorods grow on either a chain or from facets of SiC nanoparticles. They are usually straight and preferentially orientated along the [111] direction. Branching phenomenon exists for these nanorods. Typical SiC nanorod tip was analyzed by HRTEM image and EDS analysis. Based on an experimental analysis, a formation mechanism is proposed to explain the microstructural characterization of the SiC nanorods.

Si3N4/SiC interface structure in SiC-nanocrystal-embedded a-Si3N4 nanorods was studied by high-resolution transmission electron microscopy. The SiC-nanocrystal-embedded a-Si3N4 nanorods were synthesized by the method of carbothermal reduction of SiO in pure N2 atmosphere, while the SiC nanocrystals were produced from a substitution of SiC for Si3N4. Between SiC and Si3N4, there are three kinds of plane configurations and a set of orientation relationships, i.e., Si3N4, and nearly (111)SiC//(1010)Si3N4 with low-angle discrepancy of either 3

用高分辨电子显微学方法研究了Ni80Fe20/Mo磁性多层膜，结果表明：(1)多层膜的结晶状态，随Mo非磁性层厚度而变化。当Mo层厚度为0.7nm时，多层膜基本为非晶；当Mo层厚度大于116nm时，Mo层和NiFe层内分别结晶为体心立方和面心立方多晶，层内晶粒尺寸为2-6nm。(2)在Mo层厚度为1.6和2.1nm的多层膜中，NiFe层和Mo 层之间存在两种取向关系：(110) Mo∥(111) NiFe，[111]Mo∥[110]NiFe和（110）Mo∥（111）NiFe，[001 ]Mo ∥[ 110 ]NiFe(3) NiFe层和Mo层之间有较清晰的界面。界面附近3-4个原子层范围内，NiFe 和Mo 的面间距分别相对块状晶体沿生长方向膨胀和压缩。讨论了界面附近面间距的变化，并根据该多层膜显微结构特征，讨论了此系统未显示巨磁电阻效应的原因。