阐述了一种温度湿度智能数据采集的无线传感器网络，介绍了传感器节点的软件与硬件设计。该系统基于Zig Bee无线通信协议设计，克服了有线传感器网络的局限性，避免了其他无线通信技术的高功耗的缺点，节点成本低、网络容量大、生存周期长。实验结果表明：温度测量精度为1℃，湿度精度为3%RH，可以广泛用于环境检测。

Based on conventional metal-oxide-semiconductor field-effect transistor (MOSFET), a novel kind of chemical field-effect transistor (ChemFET) gas sensor array has been designed and fabricated. The obtained sensor consists of self-assembly polyaniline (PAhD composite film containing poly (acrylic acid) (PAA) which was used as gate material of MOSFET instead of conventional metallic gate. The UV-Vis absorption spectra of PAN/PAA films were characterized. The N02 gas sensitive property of the ChemFET sensor array was also Based on conventional metal-oxide semiconductor field-effect transistor (MOSFET), a novel kind of chemical field-effect transistor (ChemFET) gas sensor array has been designed and fabricated. The obtained sensor consists of self-assembly polyaniline (PAhD composite film containing poly (acrylic acid) (PAA) which was used as gate material of MOSFET instead of conventional metallic gate. The UV-Vis absorption spectra of PAN/PAA films were characterized. The N02 gas sensitive property of the ChemFET sensor array was also investigated. Results show that the drain current of devices increases with increasing of back-side voltage, and decreases with the increase of N02 concentration when the N02 concentration is below 20mg/g. The temperature dependence of ChemFET sensor array shows that the drain current of ChemFET sensor decreases with increasing of temperature.

采用化学聚合法制备了导电聚合物3，4-乙烯二氧噻吩膜，利用扫描电子显微镜和傅里叶变换红外光谱法对薄膜的光学成分及形貌进行了分析。采用叉指电板结构研制出了3,4-乙烯二氧噻吩薄膜气体传感器，研究了3,4．乙烯二氧噻吩薄膜气体传感器对有毒气体NO2和NH3的敏感特性以及其自身的温度特性。结果发现，3,4-乙烯二氧噻吩薄膜气体传感器对低浓度的NO2和NH3都具有很好的敏感特性。该文还对3，4-乙烯二氧噻吩薄膜对NO2和NH3两种气体的敏感机理进行了详细的讨论。

Organic light-emitting diodes (OLEDs) with a structure of indium-tin-oxide (ITO)/N, N'-bis (3-methylphenyl)-N, N'-diphenylbenzidine (TPD): polystyrene (PS)/tris (8-hydroxyquinoline)-aluminum (Alq3)/Mg: Ag were fabricated. Among them PS: TPD thin film acts as a hole transporting layer (HTL)and was prepared via dimethylbenzene solution dissolved with a mixture ofPS: TPD by spin-coating method. The influence of TPD dopde ratio in the mixture on the performance of device was investigated. Experimental results show that luminescent brightness of devices increase with the enhancement of TPD doped ratio, while electroluminescent spectra are not affected. In addition, lifetime of the device when the ratio of TPD to PS is 7: 3 was 4 times higher than that of pure-TPD device. This phenomenon was postulated that PS enhanced the uniformity of TPD film, which was characterized by the result of atomic force microscope (AFM)analysis, and thus overcame the shortcoming oflow stability of small-molecular film.

利用旋涂方法在声表面波（SAW）器件的延迟通道上制备了酞菁铜（CuPC）掺杂的聚乙烯吡咯烷酮（PVP）敏感薄膜，并对制备的薄膜用四探针法和扫描电子显微镜（SEM）进行了测试和表征。结果表明：薄膜中的CuPC颗粒均匀分散在聚合物薄膜中，其粒径尺寸约为2Onm，薄膜的龟导率在l0-6■·cm-1量级。根据提出的理论模型，计算出由于敏感膜的质量变化与电导率的变化导致了中心频率的漂移，该漂移值的理论计算结果与实验验证结果相符。