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【期刊论文】1.55μm reflection-type optical waveguide switch based on SiGe/Si plasma dispersion effect
李宝军, Baojun Li a), Guozheng Li and Enke Liu, Zuimin Jiang, Chengwen Pei, and Xun Wang
Appl. Phys. Lett., Vol. 75, No.1, 5 July 1999,-0001,():
-1年11月30日
Based on total internal reflection and plasma dispersion effect, a SiGe/Si asymmetric optical waveguide switch with transverse injection structure has been proposed and fabricated. The switch performance is measured at the wavelength of 1.55μm. A modulation depth of 90% at an injection current of 110mA is obtained, and the switching time is about 0.2μs. The device reaches a maximum optical switching at the injection current of 120mA. The extinction ratio is larger than 34dB and the crosstalk and insertion loss are less than -18.5 and 2.86dB, respectively.
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【期刊论文】High carrier injection optical switch based on two-mode interference in SiGe alloy
李宝军, Baojun Li a) and Soo-Jin Chua b)
Appl. Phys. Lett., Vol. 80, No.2, 14 January 2002,-0001,():
-1年11月30日
Based on the two-mode interference principle, the high carrier injection effect, and the free-carrier plasma dispersion effect, a directional coupling active optical switch in SiGe/Si alloy has been fabricated. Its insertion loss and crosstalk were measured to be 2.74 and -15.5dB, respectively, at the wavelength of 1.3μm and the total switching current of 110 mA. The fastest response time of the switch is up to 30 ns.
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【期刊论文】Ultracompact, multifunctional, and highly integrated 3
李宝军, Baojun Li, a) Jing Li, Yuzhou Zhao, and Xubin Lin, Soo-Jin Chua b) and Lingyun Miao, Eugene A. Fitzgerald c) and Minjoo L. Lee, Bharat S. Chaudhari d)
Appl. Phys. Lett., Vol. 84, No.13, 29 March 2004,-0001,():
-1年11月30日
An ultracompact, multifunctional, and highly integrated photonic switch with a 3
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李宝军, Baojun Li a), Soo-Jin Chua, Eugene A. Fitzgerald, Bharat S. Chaudhari, Shaoji Jiang and Zhigang Cai
Appl. Phys. Lett., Vol. 85, No.7, 16 August 2004,-0001,():
-1年11月30日
An intelligent and monolithic integration of optical power splitter with optically switchable cross-connect has been proposed. It is fabricated on the multimode interference principle in Si-based SiGe material system and configured for a 332 symmetrical structure of the three input waveguides and the two output waveguides. The central waveguide section is based on a multimode interference and incorporated with an activated carrier injection element. The operating wavelengths of the device are specially designed for 1545, 1550, and 1555 nm conventional-band wavelengths. The measured crosstalk is at around −17 dB and the average insertion loss is about 5.25 dB. At switch-ON state, the measured injection current is 370 mA corresponding to an injection current density of 950 A/cm2.
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李宝军, Baojun Li, Yao Zhang, Lihua Teng, Yuzhou Zhao, Soo-Jin Chua, Xiangrong Wang
24 January 2005 Vol. 13, No.2 OPTICS EXPRESS,-0001,():
-1年11月30日
A symmetrical digital photonic splitting switch with a low insertion loss and a low driving voltage is developed using carrier injection in a silicon-germanium material for optical communication systems and networks at a wavelength of 1.55 μm. The switch structure has been improved based on a traditional 1×2 Y−shaped configuration by using two widened carrier injection regions. The switch has a threshold voltage of 1.0 V and a corresponding threshold current of 85 mA on one of the two output waveguide arms. The calculated driving current density is 5.7 kA/cm2 and the calculated power consumption is 85 mW at the 85 mA of threshold current. The measured insertion loss and the crosstalk are 5.2 dB and −9.6 dB, respectively, at driving voltage over 2V.
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