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【期刊论文】Oxygen-transport phenomena in a small silicon Czochralski furnace
李明伟, You-Rong Li a, Ming-Wei Li a, Nobuyuki Imaishi b, *, Yasunobu Akiyama b, Takao Tsukada c
Journal of Crystal Growth 267(2004)466-474,-0001,():
-1年11月30日
In order to understand the basic characteristics of the gas-phase mass-transfer coefficient (kg) in a small silicon Czochralski (Cz) furnace, a very crude model was proposed and the results were correlated by the Sherwood number as a function of Reynolds number. It was confirmed that by installing a gas guide in the hot zone, the mass transfer coefficient was significantly enhanced. A set of global analyses of small Cz furnaces was conducted with different values of diffusivity of SiO in the gas phase (DSiO) and of oxygen in the melt phase (DO) in order to elucidate which rate process controls the average oxygen concentration ([O]ave) in the grown crystal. These simulations revealed that in these small Cz furnaces, [O]ave is dependent on the gas phase mass transfer rate and melt flow patterns. A decrease in DSiO causes an increase in [O]ave. An increase in DO tends to increase [O]ave slightly in most cases.
A1., Computer simulation, A1., Fluid flow, A1., Heat transfer, A1., Mass transfer, A2., Czochralski method, B2., Diffusivity, B2., Finite-element method, B2., Oxygen transport, B2., Semiconducting silicon
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【期刊论文】Numerical investigation of FZ-growth of GaAs with encapsulant
李明伟, Mingwei Li a, *, Wenrui Hu b, Shuxian Chen a
International Journal of Heat and Mass Transfer 47(2004)2941-2947,-0001,():
-1年11月30日
Numerical simulation of flow and heat transfer for a 3 in. (0.075m) diameter liquid encapsulant full float zone (LEFZ) growth of single-crystal GaAs was conducted using the finite-element method. Convective and conductive heat transfers, radiative heat transfer between diffuse surfaces and the Navier–Stokes equations for both melt and encapsulant as well as the interface position are all combined and solved simultaneously. The effect of the thickness of encapsulant, rotation rate of crystal and feed rod on the flow and heat transfer as well as on the growing and melting interface shape were investigated.
Liquid encapsulant full float zone, GaAs, Boron oxide, Finite-element method
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李明伟, LIU Chun-mei, LI Ming-wei, CHEN Huai-jie
材料科学与工程学报,2005,23(4):546~549,-0001,():
-1年11月30日
采用有限元法对LEC法生长的3英寸GaAs单晶中的热应力进行求解。假设晶体为轴对称的各向同性线弹性体。主要讨论了不同液封厚度、轴向磁场强度以及晶体转速下的流动和传热所对应的晶体中的热应力分布,同时也考察了界面形状对应力的影响。
LEC法, 热应力, GaAs单晶
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李明伟, MINGWEI LI and DANLING ZENG†
Int. J. Heat Mass Transfer Vol. 39, No.17, pp. 3725-3732, 1996,-0001,():
-1年11月30日
The present paper is devoted to the investigation of the effect of liquid encapsulation on the Marangoni convection in its inner columnar liquid layer under a microgravity condition. The asymptotic solution of the mathematic model established in the paper was obtained for the immiscible axisymmetric coaxial liquid columns contained between planar faces. Numerical simulation based on the asymptotic solution was carried out. The main influence factors on the process were discussed in detail. It is found that proper selection of the related parameters will result in a remarkable reduction of the Marangoni convective flow. Copyright.
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李明伟, LI Mingwei, KANG Ning, ZENG Danling
工程热物理学报,1997,18(6):725~728,-0001,():
-1年11月30日
A mathematical model describing the axisymmetric thermocapillary convection in three immiscible coaxial liquid columns held between two planar faces with individual constant temperature is proposed in the present paper. An approximate analytical solution is obtained by asymptotical way. The expected control of the thermocapillary convection can be realized by choosing reasonable matching parameters.
热毛细对流, 液封, 渐近线方法
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