您当前所在位置: 首页 > 学者

陈星弼

  • 183浏览

  • 0点赞

  • 0收藏

  • 0分享

  • 59下载

  • 0评论

  • 引用

期刊论文

Theory of the Switching Response of CBMOST

陈星弼CHEN Xingbi

Chinese Journal of Electronics Vol.10 No.1, Jan. 2001,-0001,():

URL:

摘要/描述

A theory of the switching respinse of the CBMOST (OR COOLMOST, or Super Junction device) is proposed based on the physical nd geo-metracal parameters inherent in the voltage sustaining structure. It is proven that the salient feature of such a device is that the storage time in turn-off process is a little longe than the conventional power Most due to its heavier doping. Explanation for the fast turn-on Process DESPITE OF Having an oppositely doped region inside the voltage sustaining layer is also given. It is also shown that if p-(or n-) regions in the CB-sturcture are not directly contacted to the n+(or p+) drain region. Then device is a normally-on one. Measures are proposed for the real device to be not normally-on.

【免责声明】以下全部内容由[陈星弼]上传于[2006年03月20日 22时29分41秒],版权归原创者所有。本文仅代表作者本人观点,与本网站无关。本网站对文中陈述、观点判断保持中立,不对所包含内容的准确性、可靠性或完整性提供任何明示或暗示的保证。请读者仅作参考,并请自行承担全部责任。

我要评论

全部评论 0

本学者其他成果

    同领域成果