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期刊论文
Multistep characteristics in Si/SixGel-x/Si heterojunction bipolar transistor with δ-doped base
ELECTRONICS LETTERS 13th April 1995 Vol. 31 No.8，-0001，（）：
The authors report regenerative switching in an npn Si/Si0.7Ge0.3/Si heterojunction bipolar transistor with a δ-doped base is reported. When operated in the avalanche regime the device exhibits switching characteristics in collector current against emitter-collector bias voltage. The I-V curve also shows multisteps between the OFF and ON states at room temperature, which may be due to the quantised energy levels formed by the thin δ-doped base
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