黄风义
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- 姓名:黄风义
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学术头衔:
博士生导师
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学科领域:
半导体技术
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暂无
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2955
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成果阅读
326
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成果数
9
【期刊论文】Theory of Strain Relaxation for Epitaxial Layers Grown on Substrate of a Finite Dimension
黄风义, F.Y. Huang*
,-0001,():
-1年11月30日
We present an equilibrium theory for strain relaxation in epitaxial layers grown on substrates of a finite dimension. The conventional dislocation model is refined to take account of the multiple reflection of image dislocations. The effect of strain transfer and dilution due to finite vertical and lateral dimensions of the substrate is also considered. The critical thickness has been obtained based on an energy balance approach. Detailed numerical analysis with primary experiments for the SiGe alloy system is also provided.
62., 20., Dc,, 62., 20., Fe,, 68., 55., Jk,, 68., 60., Bs
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黄风义, F. Y. Huang, G. L. Zhou, Z. F. Fan, G. B. Gao, A. E. Botchkarev, B. Sverdlov and H. Morkoc
ELECTRONICS LETTERS 29th April 1993 Vol. 29 No.9,-0001,():
-1年11月30日
The authors use a lateral emitter resistor in floating base GaAs/InGaAs/AIGaAs heterojunction bipolar photo-transistors to reduce the surface recombination in the vertical wall of the emitte-base junction and increase the photo-sensitivity at low injection levels. The same process also reduces the dark current in the reverse biased collector junc-tion.
Optical receivers,, Phototransistors,, Bipolar devices
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黄风义, F.Y. Huang, G.L. Zhou and . Morkoc
ELECTRONICS LETTERS 13th April 1995 Vol. 31 No.8,-0001,():
-1年11月30日
The authors report regenerative switching in an npn Si/Si0.7Ge0.3/Si heterojunction bipolar transistor with a δ-doped base is reported. When operated in the avalanche regime the device exhibits switching characteristics in collector current against emitter-collector bias voltage. The I-V curve also shows multisteps between the OFF and ON states at room temperature, which may be due to the quantised energy levels formed by the thin δ-doped base
Silicon-germanium,, Heterojunction bipolar transistors
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黄风义, A. Salvador, F. Huang, B. Sverdlov, A.E. Botchkarev and H. Morkoc
ELECTRONICS LETTERS 1st September 1994 Vol. 30 No.18,-0001,():
-1年11月30日
Epitaxial lift-off (ELO) techniques were employed in the fabrication of lnP/InGaAs vertical surface light emitting diodes and resonant cavity enhanced photodetectors on Si. External mirrors were employed consisting of Si/SiO2 quarter wave dielectric stacks. The main peak in the emission spectrum of the fabricated device has an FWHM of 8nm. The spectral response of the photodetector shows wavelength selectivity, and with an lnGaAs absorbing layer only 0.1μm thick a peak quantum efficiency of 0.48 was obtained in the 1.5μm spectral region.
Photodetectors,, Optoelectronics
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黄风义, F. Y. Huang, K. Sakamoto, K. L. Wang, P. Trinh, and B. Jalali
IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 9, NO.2, FEBRUARY 1997,-0001,():
-1年11月30日
A Si-based waveguide photodetector with a response in the 1.3-1.55-m wavelength range is demonstrated. The active absorption layer of the pin photodiode consists of a SiGeC alloy epitaxially grown on a Si substrate with a Ge content of 55% and a thickness of 800 A℃. The external quantum efficiency for a 400-m-long waveguide, measured by using a single-mode fiber coupled to the waveguide facet, is 0.2% at 1.55m. The dark current density at peak photoresponse is 40pA/m2. The quantum efficiency can be further enhanced by using multiple SiGeC layers as the absorber. Direct measurements of the absorption coefficient for the alloy layer are also reported.
Photodetectors,, waveguides,, silicon materials/, devices
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【期刊论文】EPITAXIAL SiGeC/Si PHOTODETECTOR WITH RESPONSE IN THE 1.3-1.55μm WAVELENGTH RANGE
黄风义, F.Y. Huanga), Shawn G. Thomas, Michael Chu, Kang L. Wang
,-0001,():
-1年11月30日
We demonstrate a Si-based photodetector with a response in the 1.3-1.55μm wavelength range. The active absorption layer of the pin photodiode consists of a pseudomorphic SiGeC alloy grown on a Si substrate with a Ge content of 55% and a thickness of 800 A. By using a single-mode fiber butt coupled to the waveguide facet, the external quantum efficiency for a 400-gin long waveguide is 0.2% at 1.55μm, and 8% at 1.3 gin. The external efficiency can be further improved by using a multiple layer absorber structure. The high efficiency and high speed characteristics together with the low leakage current density imply potential application of the SiGeC/Si photodetector for optical fiber communications and optical interconnects in the 1.3-1.55μm wavelength range.
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【期刊论文】Electric-field effect on the minigap state in semiconductor superlattices
黄风义, F. Y. Huang and H. Morkoc
Appl. Phys Lett 60 (6), 10 February 1992,-0001,():
-1年11月30日
Electric-field effect on the confined minigap states in coupled semiconductor superlattices is studied theoretically. Due to the perturbation of periodicity in the superlattice by an applied field, delocalization of the confined states is observed. In the weak field regime, delocalization of the minigap states is similar to the quantum confined Stark effect in single quantum wells. In the strong field regime, confined states disappear. and addtional states from the original superlattice miniband are introduced to form semibound states due to the mixing of localized Stark ladders with the gap mode. Our numerical simulation will have an impact on confirmation of the propsed confined states in experimental observations. Possible device applications are discussed.
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【期刊论文】Comment on "New Approach in Equilibrium Theory for Strained Layer Relaxation"
黄风义
,-0001,():
-1年11月30日
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黄风义, G. Freeman, D. Ahlgren, D.R. Greenberg**, R. Groves, F. Huang, G. Hugo, B. Jagannathan, S.J. Jeng, J. Johnson*, K. Schonenberg**, K. Stein, R. Volant, S. Subbanna
,-0001,():
-1年11月30日
We present a self-aligned, 0.18μm emitter width SiGe HBT with fv of90GHz, fMAX of 90GHz (both at VDB=0.5V), NFMIN of 0.4dB, and BVcEo of 2.7V. We also demonstrate that this device is integrable with IBM's 0.18μm, 1.8/3.3V copper metallization CMOS technology with little effect on the CMOS device properties and design rules. Emerging high-frequency applications, such as 40Gb/s SONET and software radios are driving an increase in RF technology requirements to beyond prior-generation production SiGe HBT 50GHz fT values. Furthermore, today's I-2 GHz wireless applications continue to drive technologies to lower noise and lower power while demanding the low cost of silicon. Whereas>100GHz fT SiGe HBTs have been reported in the literature, the overall integration of such devices into manufacturable, self-aligned, BiCMOS integrated processes, achieving simultaneously high speed, low noise, and low power has not been reported to date. Both lateral and vertical HBT scaling are employed to improve performance over prior generation IBM SiGe BiCMOS technologies [1][2]. The parametric comparison between generations of IBM HBT is described in Table 1. With improved lithography available through the base CMOS technology, critical device areas are shrunk between technology generations (Fig. 1). Benefits are reduced parasitics and significantly decreased base resistance [3]. Reduced parasitics are essential for commensurate improvements in fMAX when fT is improved as a result of device vertical scaling. In vertical scaling, the base profile and collector depletion regions are significantly narrowed, resulting in improved transit times from prior generation SiGe HBT designs (Fig. 2). The germanium width is decreased with the base width, allowing the germanium profile to be modified for improved device performance without increased strain and associated yield concerns. Furthermore, the collector concentration is increased in order to push out the Kirk effect to higher current densities, resulting in further improvements in fT and fMAX, with peak values occurring at approximately 4mA/μm2.
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