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High-indium-content InxGa1-xAs/GaAs quantum wells with emission wavelengths above 1.25 μm at room temperature

牛智川H. Q. Ni Z. C. Niu X. H. Xu Y. Q. Xu W. Zhang X. Wei L. F. Bian Z. H. He Q. Han R. H. Wu

Appl. Phys. Lett. , Vol. 84, No. 25, 21 June 2004,-0001,():

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摘要/描述

High-indium-content InxGa1-xAs/GaAs single/multi-quantum well (SQW/MQW) structures have been systematically investigated. By optimizing the molecular-beam epitaxy growth conditions, the critical thickness of the strained In0.475Ga0.525As/GaAs QWs is raised to 7 nm, which is much higher than the value given by the Matthews and Blakeslee model. The good crystalline quality of the strained InGaAs/GaAs MQWs is proved by x-ray rocking curves. Photoluminescence measurements show that an emission wavelength of 1.25 μm at room temperatures with narrower full width at half maximum less than 30 meV can be obtained. The strain relaxation mechanism is discussed using the Matthews–Blakeslee model.

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