1.55 μm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs
APPLIED PHYSICS LETTERS 87, 111105(2005)，-0001，（）：
We report the design, growth, fabrication, and characterization of a GaAs-based resonant-cavity-enhanced (RCE) GaInNAs photodetector operating at 1.55 μm. The structure of the device was designed using a transfer-matrix method (TMM). By optimizing the molecular-beam epitaxy growth conditions, six GaInNAs quantum wells were used as the absorption layers. Twenty-five (25)- and 9-pair GaAs/ AlAs-distributed Bragg reflectors were grown as the bottom and top mirrors. At 1.55 μm, a quantum efficiency of 33% with a full width at half maximum of 10 nm was obtained. The dark current density was 3×10−7 A/cm2 at a bias of 0 V and 4.3×10−5 A/cm2 at a reverse bias of 5 V. The primary time response measurement shows that the device has a rise time of less than 800 ps.
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