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1.55 μm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs

牛智川Q. Han X. H. Yang Z. C. Niu H. Q. Ni Y. Q. Xu S. Y. Zhang Y. Du L. H. Peng H. Zhao C. Z. Tong R. H. Wu and Q. M. Wang

APPLIED PHYSICS LETTERS 87, 111105(2005),-0001,():

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摘要/描述

We report the design, growth, fabrication, and characterization of a GaAs-based resonant-cavity-enhanced (RCE) GaInNAs photodetector operating at 1.55 μm. The structure of the device was designed using a transfer-matrix method (TMM). By optimizing the molecular-beam epitaxy growth conditions, six GaInNAs quantum wells were used as the absorption layers. Twenty-five (25)- and 9-pair GaAs/ AlAs-distributed Bragg reflectors were grown as the bottom and top mirrors. At 1.55 μm, a quantum efficiency of 33% with a full width at half maximum of 10 nm was obtained. The dark current density was 3×10−7 A/cm2 at a bias of 0 V and 4.3×10−5 A/cm2 at a reverse bias of 5 V. The primary time response measurement shows that the device has a rise time of less than 800 ps.

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版权说明:以下全部内容由牛智川上传于   2007年09月29日 09时26分20秒,版权归本人所有。

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