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期刊论文

High structural and optical quality 1.3 μm GaInNAs/GaAs quantum wells with higher indium content grown by molecular-beam expitaxy

牛智川Shiyong Zhang Zhichuan Niu Haiqiao Ni Donghai Wu Zhenhong He Zheng Sun Qin Han and Ronghan Wu

APPLIED PHYSICS LETTERS 87, 161911(2005),-0001,():

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摘要/描述

High structural and optical quality 1.3 μm GaInNAs/GaAs quantum well (QW) samples with higher (42.5%) indium content were successfully grown by molecular-beam epitaxy. The cross-sectional transmission electron microscopy measurements reveal that there are no structural defects in such high indium content QWs. The room-temperature photoluminescence peak intensity of the GaIn0.425NAs/GaAs (6 nm/20 nm) 3QW is higher than, and the full width at half maximum is comparable to, that of In0.425GaAs/GaAs 3QW, indicating improved optical quality caused by strain compensation effect of introducing N to the high indium content InGaAs epilayer.

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版权说明:以下全部内容由牛智川上传于   2007年09月29日 09时26分36秒,版权归本人所有。

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