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期刊论文
1/f Noise behaviors of NO-nitrided n-MOSFETs
Solid-State Electronics 45(2001)431-433，-0001，（）：
1/f Noise behaviors of nitric oxide (NO)-nitrided n-MOSFETs are investigated. Greatly decreased 1/f noise at low frequencies and enhanced stability of noise properties under hot-carrier stress are achieved by annealing NO-nitrided gate oxide in an N2O ambient. The physical mechanisms involved lie in the fact that N2O annealing partly removes the oxide traps situated farther away from the oxide/Si interface and simultaneously increases interfacial nitrogen incor-poration.
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