提示
朱梓忠
-
31浏览
-
0点赞
-
0收藏
-
0分享
-
107下载
-
0评论
-
引用
期刊论文
Conduction-band-edge variations of pseudomorphic Si1-x-yGexCy alloys on (110) Si and Ge substrates
Solid State Communications 111(1999)577-581，-0001，（）：
The trends of the conduction band minima with the alloy compositions for the pseudomorphic Si1-x-yGexCy alloys grown on (110) Si and Ge substrates are investigated theoretically with the use of the ab initio pseudopotential method and the virtualcrystal approximation. It is found that the minimum energy gaps are all indirect and not monotonically dependent on the compositions in some cases. In the case of the tensile and compressive strains, the minimum energy gap decreases and increases, respectively, as the C fraction increases and the Ge fraction is constant. Our result is in good agreement with other theoretical results for the Si12xGex system.
【免责声明】以下全部内容由[朱梓忠]上传于[2005年01月19日 18时24分30秒]，版权归原创者所有。本文仅代表作者本人观点，与本网站无关。本网站对文中陈述、观点判断保持中立，不对所包含内容的准确性、可靠性或完整性提供任何明示或暗示的保证。请读者仅作参考，并请自行承担全部责任。
本学者其他成果
同领域成果
