李养贤，学者主页-中国科技论文在线

李养贤

半导体材料、磁性材料

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姓名：李养贤
目前身份：
担任导师情况：
学位：
学术头衔：

博士生导师
职称：-
学科领域：

材料科学
研究兴趣：半导体材料、磁性材料

个人简介

　李养贤，1959年11月生，1998年获河北工业大学与中科院物理所联合培养工学博士学位。
　　主要研究领域：半导体材料、磁性材料。先后承担并完成多项课题，目前负责、承担国家863项目、国家攀登计划项目、国家基金项目、国防科工委项目及省市级多项课题。曾在国内外重要学术刊物（如Appl Phys. Lett, J.Appl. Phys, J. Cryst. Growth, J. Material Research, J Phys:Condensed Matter，J.Material Research & Technology, Chinese Phys.Letter，ACTA Meallurgica Sinica, 物理学报、半导体学报等）发表学术论文60余篇，其中30多篇收入三大索引，曾多次获省级科研奖励。
　　目前担任河北工业大学材料学院副院长，中国物理学会磁学分会副秘书长，中国电子学会高级会员，河北省自然科学基金评审委员会委员，河北省新型功能材料研究所重点实验室副主任，河北省磁技术与磁材料研究中心（重点实验室）副主任。

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2009-07-14

【期刊论文】Magnetic field-controlled two-way shape memory in CoNiGa single crystals

李养贤， Y.X. Li， H.Y. Liu， F.B. Meng， and L.Q. Yan， G.D. Liu， X.F. Dai， M. Zhang， Z.H. Liu， J.L. Chen， and G.H. Wu a)

APPLIED PHYSICS LETTERS, 2004, 84 (18): 3594～3596，-0001，（）：

-1年11月30日

摘要

A two-way magnetic field controlled shape memory effect has been observed in single crystals of CoNiGa with martensitic transformation temperature ranging from 205 to 341K. Two-way shape memory with -2.3% strain has been obtained in free samples. By applying a bias field of up to 2T, the shape memory strain can be continuously controlled from negative 2.3% to positive 2.2% giving it a total strain of 4.5%. The magnetic properties of CoNiGa show that it is a good shape memory material working at relatively high temperature of up to 450K, and has a lower magnetic anisotropy than NiMnGa.

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2009-07-14

【期刊论文】Study on the preparation techniques and properties of bonded magnetostrictive materials

李养贤， H.Y. Liu， Y.X. Li， a) J.P. Qu， B.D. Liu， H.Y. Guo， F.B. Meng， L. Hu， S.Y. Li， Z.X. Zhang， and H. Qin b)， J.L. Chen， H.W. Zhao， and G.H. Wu

JOURNAL OF APPLIED PHYSICS, 2002, 91 (10): 8213～8215，-0001，（）：

-1年11月30日

摘要

The preparation and measurement of the magnetoelastic properties of bonded Terfenol-D and Pr0.15Tb0.3Dy0.55Fe2 composites are reported. The experiments were carried out in various conditions, including compaction pressure and binder proportion in order to optimize the preparation method. The typical conditions are with the compaction pressure between 48 and 80MPa and a weight ratio of binder to powder of 4:100. Large magnetostrictions of 1186×10-6 at 450KA/m for the Terfenol-D composite with an applied compressive stress of 10MPa and 900×10-6 at 900KA/m for the Pr0.15Tb0.3Dy0.55Fe2 composite have been obtained with the following conditions: particle size of 165μm, weight ratio of binder to powder of 4:100, and a compaction pressure of 80MPa.

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2009-07-14

【期刊论文】The effect of boron on the structure and magnetic properties of Pr0.15Tb0.3Dy0.55Fe1.85 alloy

李养贤， H.Y. Liu a， Y.X. Li a， *， X.W. Xu a， G.F. Chen a， S.W. Zhao a， J.P. Qu a， J.L. Chen b， G.H. Wu b

Journal of Magnetism and Magnetic Materials 296(2006)114-117，-0001，（）：

-1年11月30日

摘要

The structure, Curie temperature and magnetostriction of Pr0.15Tb0.3Dy0.55Fe1.85-xBx (x=0-0.3) alloys have been investigated using X-ray diffraction, AC susceptibility and standard strain gauge techniques. It was found that all the samples possess entirely MgCu2-type cubic Laves structure. With increasing B concentration, the lattice parameter decreases, while the Curie temperature remains unchanged. The magnetostriction of Pr0.15Tb0.3Dy0.55Fe1.85-xBx alloys at room temperature increases with increasing B concentration firstly, and then decreases slightly.

Magnetostriction， Pr0.， 15Tb0.， 3Dy0.， 55Fe1.， 85-xBx， Laves phase

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2009-07-14

【期刊论文】Giant magnetostriction on Fe85Ga15 stacked ribbon samples

李养贤， G.D. Liu， L.B. Liu， Z.H. Liu， M. Zhang， J.L. Chen， J.Q. Li， and G.H. Wu a)， Y.X. Li and J.P. Qu， T.S. Chin

APPLIED PHYSICS LETTERS VOLUME, 2004, 84 (12): 2124～2126，-0001，（）：

-1年11月30日

摘要

Large magnetostrictions of -1300 and +1100ppm related in the different directions have been obtained in our stacked Fe85Ga15 ribbon samples. In the case of non-180

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2009-07-14

【期刊论文】The effects of neutron irradiation on the oxygen precipitation in Czochralski-silicon

李养贤， Y.X. Li a， *， H.Y. Guo a， B.D. Liu a， T.J. Liu a， Q.Y. Hao a， C.C. Liu a， D.R. Yang b， D.L. Que b

Journal of Crystal Growth 253(2003)6-9，-0001，（）：

-1年11月30日

摘要

y dose of neutron irradiation accelerated the oxygen precipitation in CZ-Si under higher annealing temperature (1070-1130℃). We attribute this effect to the form of defect cluster induced by neutron irradiation, it may be as the core for the oxygen precipitation heterogeneous nuclei and those shorten the nucleation time and accelerate oxygen precipitates in the bulk of Si wafer. In addition, the oxygen diffusion is enhanced by the presence of a large quantity of vacancies near the surface of the wafer.

A1.， Defects， A1.， Point defects， A1.， Radiation， B2.， Semiconducting silicon

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2009-07-14

【期刊论文】Positron annihilation spectroscopy studies of fast neutron irradiated Czochralski silicon

李养贤， Shuai Yang a， Yangxian Li a， *， Qiaoyun Ma a， Heyan Liu a， Qiuyan Hao a， Yongzhang Li b， Shengli Niu b， Hongtao Li b

Journal of Crystal Growth 276 (2005) 43–47，-0001，（）：

-1年11月30日

摘要

In this work, the changes of irradiation defect in high dose (1.17×1019ncm-3) neutron-irradiated Czochralski silicon (CZ-Si) at different annealing temperatures was investigated using the Positron annihilation spectroscopy (PAS) and Fourier transform infrared spectrometer (FTIR) technique. It is found that divacancy (V2) and V4 abound in irradiated CZ-Si. With the increase of the annealing temperature the monovacancy type defect (such as VO) is annihilated. The results of PAS and FTIR show that the formation of V4 is enhanced when the annealing temperature ran up to 400-600℃ and with the FTIR absorption peak at the wave number of 829 cm-1 (VO) disappearing, five absorption peaks appear at the wave number of 825cm-1 (V2O2), 834 cm-1 V3O2; 840cm-1 V2O; 720cm-1 and 919cm-1: It can be concluded that these defect-impurity complexes prolong the lifetime of positrons.

A1.， Irradiation defect， A1.， Neutron irradiation， A1.， PAS， A1.， FTIR， B1.， Czochralski silicon， B1.， V4-type defects

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2009-07-14

【期刊论文】Infrared absorption spectrum studies of the VO defect in fast-neutron-irradiated Czochralski silicon ☆

李养贤， Shuai Yang a， Yangxian Li a， *， Qiaoyun Ma a， Lili Liu a， Xuewen Xu a， Pingjuan Niu b， Yongzhang Li c， Shengli Niu c， Hongtao Li c

Journal of Crystal Growth 280 (2005) 60–65，-0001，（）：

-1年11月30日

摘要

In this work the difference of annealing behaviors of VO (A-center) in varied doses of neutron-irradiated Czochralski silicon (S1: (5×1017n/cm2) and S2: (1.07×1019n/cm2)) was studied. The vacancy-oxygen complex (VO) is one of the main defects formed in neutron-irradiated Czochralski silicon (CZ-Si). In this defect, the oxygen atom shares a vacancy, it is bonded to two silicon neighbors. Annealed at 200℃, divacancies are trapped by Oi to form the V2O (840cm-1). With the decrease in the 829cm-1 (VO) three infrared absorption bands at 825, 834 and 840cm-1 (V2O) rise after being annealed at the temperature range of 200-500℃. After being annealed at 450-500℃ the main absorption bands in the S1 sample are 834, 825 and 889cm-1 (VO2), and 825 and 919.6cm-1 (O-V-O) in S2. Annealing of the A-center in varied neutron-irradiated CZ-Si consists of two processes. The first is trapping of VO by interstitial oxygen (Oi) in low-dose neutron-irradiated CZ-Si (S1) and the second is capturing of the wandering vacancy by VO, etc, in high-dose neutron-irradiated CZ-Si (S2). The VO2 and O-V-O defects play an important role in the annealing of the A-center. With the increase in the irradiation dose, the annealing behavior of the A-center is changed and the formation of the VO2 is depressed.

A1.， A-center， A1.， FTIR， A1.， Irradiation defect， A1.， Neutron irradiation， B2.， Czochralski silicon

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2009-07-14

【期刊论文】Infrared absorption spectrum studies of the VO defect in fast-neutron-irradiated Czochralski silicon ☆

李养贤， Shuai Yang a， Yangxian Li a， *， Qiaoyun Ma a， Lili Liu a， Xuewen Xu a， Pingjuan Niu b， Yongzhang Li c， Shengli Niu c， Hongtao Li c

Journal of Crystal Growth 280 (2005) 60–65，-0001，（）：

-1年11月30日

摘要

A1.， A-center， A1.， FTIR， A1.， Irradiation defect， A1.， Neutron irradiation， B2.， Czochralski silicon

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2009-07-14

【期刊论文】The effects of neutron irradiation on the oxygen precipitation in Czochralski-silicon

李养贤， Y.X. Li a， *， H.Y. Guo a， B.D. Liu a， T.J. Liu a， Q.Y. Hao a， C.C. Liu a， D.R. Yang b， D.L. Que b

Journal of Crystal Growth 253(2003)6-9，-0001，（）：

-1年11月30日

摘要

A1.， Defects， A1.， Point defects， A1.， Radiation， B2.， Semiconducting silicon

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2009-07-14

【期刊论文】The effect of boron on the structure and magnetic properties of Pr0.15Tb0.3Dy0.55Fe1.85 alloy

李养贤， H.Y. Liu a， Y.X. Li a， *， X.W. Xu a， G.F. Chen a， S.W. Zhao a， J.P. Qu a， J.L. Chen b， G.H. Wu b

Journal of Magnetism and Magnetic Materials 296(2006)114-117，-0001，（）：

-1年11月30日

摘要

Magnetostriction， Pr0.， 15Tb0.， 3Dy0.， 55Fe1.， 85-xBx， Laves phase

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2009-07-14

【期刊论文】Magnetic field-controlled two-way shape memory in CoNiGa single crystals

李养贤， Y.X. Li， H.Y. Liu， F.B. Meng， and L.Q. Yan， G.D. Liu， X.F. Dai， M. Zhang， Z.H. Liu， J.L. Chen， and G.H. Wu a)

APPLIED PHYSICS LETTERS, 2004, 84 (18): 3594～3596，-0001，（）：

-1年11月30日

摘要

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2009-07-14

【期刊论文】Giant magnetostriction on Fe85Ga15 stacked ribbon samples

李养贤， G.D. Liu， L.B. Liu， Z.H. Liu， M. Zhang， J.L. Chen， J.Q. Li， and G.H. Wu a)， Y.X. Li and J.P. Qu， T.S. Chin

APPLIED PHYSICS LETTERS VOLUME, 2004, 84 (12): 2124～2126，-0001，（）：

-1年11月30日

摘要

Large magnetostrictions of -1300 and +1100ppm related in the different directions have been obtained in our stacked Fe85Ga15 ribbon samples. In the case of non-180