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2009年07月14日

【期刊论文】Magnetic field-controlled two-way shape memory in CoNiGa single crystals

李养贤, Y.X. Li, H.Y. Liu, F.B. Meng, and L.Q. Yan, G.D. Liu, X.F. Dai, M. Zhang, Z.H. Liu, J.L. Chen, and G.H. Wu a)

APPLIED PHYSICS LETTERS, 2004, 84 (18): 3594~3596,-0001,():

-1年11月30日

摘要

A two-way magnetic field controlled shape memory effect has been observed in single crystals of CoNiGa with martensitic transformation temperature ranging from 205 to 341K. Two-way shape memory with -2.3% strain has been obtained in free samples. By applying a bias field of up to 2T, the shape memory strain can be continuously controlled from negative 2.3% to positive 2.2% giving it a total strain of 4.5%. The magnetic properties of CoNiGa show that it is a good shape memory material working at relatively high temperature of up to 450K, and has a lower magnetic anisotropy than NiMnGa.

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2009年07月14日

【期刊论文】Study on the preparation techniques and properties of bonded magnetostrictive materials

李养贤, H.Y. Liu, Y.X. Li, a) J.P. Qu, B.D. Liu, H.Y. Guo, F.B. Meng, L. Hu, S.Y. Li, Z.X. Zhang, and H. Qin b), J.L. Chen, H.W. Zhao, and G.H. Wu

JOURNAL OF APPLIED PHYSICS, 2002, 91 (10): 8213~8215,-0001,():

-1年11月30日

摘要

The preparation and measurement of the magnetoelastic properties of bonded Terfenol-D and Pr0.15Tb0.3Dy0.55Fe2 composites are reported. The experiments were carried out in various conditions, including compaction pressure and binder proportion in order to optimize the preparation method. The typical conditions are with the compaction pressure between 48 and 80MPa and a weight ratio of binder to powder of 4:100. Large magnetostrictions of 1186×10-6 at 450KA/m for the Terfenol-D composite with an applied compressive stress of 10MPa and 900×10-6 at 900KA/m for the Pr0.15Tb0.3Dy0.55Fe2 composite have been obtained with the following conditions: particle size of 165μm, weight ratio of binder to powder of 4:100, and a compaction pressure of 80MPa.

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2009年07月14日

【期刊论文】The effect of boron on the structure and magnetic properties of Pr0.15Tb0.3Dy0.55Fe1.85 alloy

李养贤, H.Y. Liu a, Y.X. Li a, *, X.W. Xu a, G.F. Chen a, S.W. Zhao a, J.P. Qu a, J.L. Chen b, G.H. Wu b

Journal of Magnetism and Magnetic Materials 296(2006)114-117,-0001,():

-1年11月30日

摘要

The structure, Curie temperature and magnetostriction of Pr0.15Tb0.3Dy0.55Fe1.85-xBx (x=0-0.3) alloys have been investigated using X-ray diffraction, AC susceptibility and standard strain gauge techniques. It was found that all the samples possess entirely MgCu2-type cubic Laves structure. With increasing B concentration, the lattice parameter decreases, while the Curie temperature remains unchanged. The magnetostriction of Pr0.15Tb0.3Dy0.55Fe1.85-xBx alloys at room temperature increases with increasing B concentration firstly, and then decreases slightly.

Magnetostriction, Pr0., 15Tb0., 3Dy0., 55Fe1., 85-xBx, Laves phase

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2009年07月14日

【期刊论文】Giant magnetostriction on Fe85Ga15 stacked ribbon samples

李养贤, G.D. Liu, L.B. Liu, Z.H. Liu, M. Zhang, J.L. Chen, J.Q. Li, and G.H. Wu a), Y.X. Li and J.P. Qu, T.S. Chin

APPLIED PHYSICS LETTERS VOLUME, 2004, 84 (12): 2124~2126,-0001,():

-1年11月30日

摘要

Large magnetostrictions of -1300 and +1100ppm related in the different directions have been obtained in our stacked Fe85Ga15 ribbon samples. In the case of non-180

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2009年07月14日

【期刊论文】The effects of neutron irradiation on the oxygen precipitation in Czochralski-silicon

李养贤, Y.X. Li a, *, H.Y. Guo a, B.D. Liu a, T.J. Liu a, Q.Y. Hao a, C.C. Liu a, D.R. Yang b, D.L. Que b

Journal of Crystal Growth 253(2003)6-9,-0001,():

-1年11月30日

摘要

y dose of neutron irradiation accelerated the oxygen precipitation in CZ-Si under higher annealing temperature (1070-1130℃). We attribute this effect to the form of defect cluster induced by neutron irradiation, it may be as the core for the oxygen precipitation heterogeneous nuclei and those shorten the nucleation time and accelerate oxygen precipitates in the bulk of Si wafer. In addition, the oxygen diffusion is enhanced by the presence of a large quantity of vacancies near the surface of the wafer.

A1., Defects, A1., Point defects, A1., Radiation, B2., Semiconducting silicon

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  • 李养贤 邀请

    河北工业大学,河北

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