The metal-CdZnTe (CZT) interface plays a vital role in determining the contact characteristics, which is often the dominant factor influencing detector performance. The effects of the degradation of the interfacial layer between the metal contact layer and CZT surface on the mechanical and electrical properties have been investigated in this paper. The interfacial thermal stresses were simulated using 3-D finite element method (FEM). The results indicate that the maximum thermal stress is concentrated on the midst of the electrode and the magnitude of the stress produced by the different electrode materials in order is Al>Au>Pt>In. The adhesion forces between the metal contact layer and CZT surface were measured by using a Dage PC2400 Micro tester with the shear-off-method. The inter-diffusion between the metal contact layer and CZT was identified using the Anger depth profiles. The experimental results indicate that the electroless Au electrode on p-type high resistivity CZT is of smaller interfacial adhesion strength, but of better ohmicity than the sputtered Au. In addition, the aging effects on the contact characteristics of the detector were also examined.

The typical morphologies of Cu-doped ZnS nanocrystals in a polyvinyl alcohol (PVA) film by an ion complex transformation method observed by transmission electron microscope show that the particles were rather evenly distributed throughout the PVA film, and the dimension was estimated to be about 5.7nm in diameter. The crystallites of the ZnS have a finite bulk-like cubic structure identified by using the ED patterns of the sample. The Cu-doped ZnS UV absorption spectra are essentially similar to that of the undoped, but the luminescence properties are quite different from that of the undoped. The green emission band peaked at about 480nm is characteristic of copper doped ZnS nanocrystals, which could be attributed to a transition from the conduction band of ZnS to the 't2' level of Cu in ZnS band gap. The blue emission band peaked at about 430nm is characteristic of the undoped quantum particles of ZnS for the same size and it might be caused by the presence of self-activated centers, like zinc vacancies.

than that of the MCT with deposited ZnS at least in the range of 7.1-7.5μm.

In this paper effects of surface treatments of p-type Cd0.8Zn0.2Te devices were studied by Atomic Force Microscopy (AFM), Ⅰ-Ⅴ measurements, and electrical properties as well as different contact technologies using Au, Al, In and electroless Au. It is shown that electroless Au film deposited by the chemical method can form a heavily doped p+ layer on a smooth surface, which is nearly ohmic on p-type material. Electroless Au gives better contact than evaporated Au, Al or In. A post-annealing treatment of electroless Au film improves the ohmic quality of contacts and enhances the adhesion between contact layer and the Cd0.8Zn0.2Te crystal surface.