沈光地
个性化签名
- 姓名:沈光地
- 目前身份:
- 担任导师情况:
- 学位:
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学术头衔:
博士生导师
- 职称:-
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学科领域:
微电子学
- 研究兴趣:
沈光地,教授,博士生导师。1962年北京大学物理系毕业,1966年中科院半导体所研究生毕业、瑞典博士学位。现为教育部重点实验室北京光电子技术实验室首席专家、实验室主任,北京工业大学电子信息与控制工程学院学术委员会主任,北京工业大学固态电子学研究所所长,我国著名的半导体和光电子学专家,中国物理学会理事,中国电子学会半导体分会委员。
沈光地教授是我国最早(1962年)倡议并研究半导体激光器的主要人员,也是我国最早(1974年)研究并最先成功研制出CCD的中科院半导体所CCD小组组长。1985-1992年,沈光地博士在国外进行科研工作期间,主持研制发表了世界上第一批SiGe/Si异质结晶体管,这是超高速微电子领域的开拓性研究成果,并在双向负阻、SiGe/Si共振隧道器件、新型中远红外探测器和高效激光器、发光管的研究上取得了一系列国际先进水平的成果。1992年,沈光地教授回国从事半导体光电子与高速微电子科研教学工作。1993年以来,沈光地教授申请到并主持了40多项国家纵向科研课题,包括国家973、863项目7项,国家基金10项、国家九五攻关、市科委、市基金项目等,年均获得400万元以上的科研经费支持,完成了近30项国家任务,取得多项原创性科技成果;申请国家发明专利10来项,已获批准6项;发表学术论文超过200篇;并每年为国家培养博士、硕士研究生20多名。根据其创新构想研制成功的“SiGe/Si异质结双极晶体管”获北京市1998年度科技进步二等奖。2002年“高效高亮度发光二极管”获得科技部等国家五部委的国家重点新产品证书和40万元奖金,并于2003年以其创新思想与科研成果、专利为技术投资与长电科技的资金合资组建了亿元级的北京长电智源光电子有限公司。
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主页访问
1938
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关注数
0
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成果阅读
353
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成果数
6
【期刊论文】大光腔小垂直发散角In Ga As/Ga As/Al Ga As半导体激光器*
沈光地, 崔碧峰†, 李建军, 邹德恕, 廉鹏, 韩金茹, 王东凤, 杜金玉, 刘莹, 赵慧敏
物理学报,2004,53(7):2150~2153,-0001,():
-1年11月30日
提出并实现了新型隧道再生耦合大光腔半导体激光器,近场光斑宽度达到1μm ,较普通半导体激光器提高了一个数量级,有效地解决了普通半导体激光器由于发光面积狭窄而导致的端面灾变性毁坏和垂直发散角大的问题。采用低压金属有机物化学气相沉积方法生长了以C和Si分别作为掺杂剂的Al Ga As 隧道结、Ga As/In Ga As 应变量子阱有源区和新型半导体激光器外延结构,并制备出器件,其垂直发散角为20°,阈值电流密度为277APcm2,斜率效率在未镀膜时达到0.80WPA。
半导体激光器,, 大光腔,, 隧道再生
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【期刊论文】Thermal property of tunnel-regenerated multiactive-region light-emitting diodes
沈光地, Xia Guo, Guang-Di Shen, a) Yuan Ji, Xue-Zhong Wang, Jin-Yu Du, De-Shu Zou, Guo-Hong Wang, and Guo Gao, Ludwig J. Balk, Ralph Heiderhoff, and Teck Hock Lee, Kang L. Wang
Appl. Phys. Lett., Vol. 82, No.25, 23 June 2003,-0001,():
-1年11月30日
The thermal property of tunnel-regenerated multiactive-region (TRMAR) light-emitting diodes (LEDs) is studied in detail in this letter. These devices have the advantages of high quantum efficiency and high output optical power. To obtain the same output optical power, it has been shown that the thermal performance for TRMAR LEDs is much better than that of conventional ones. The heat generated from the reverse-biased tunneling junction in TRMAR LEDs is small and can be neglected as compared with heat produced from the active region as illustrated in scanning thermal microscopy result. An experimental comparison shows that the improved input power dependence on the luminescence intensity proves that TRMAR LEDs have better thermal properties than those of conventional ones.
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【期刊论文】Novel high-brightness tunneling-regenerated multi-activeregion AlGaInP light-emitting diode
沈光地, GUO Xia, SHEN Guangdi, WANG Guohong, WANG Xuezhong, DU Jinyu, GAO Guo & Kang L. Wang
SCIENCE IN CHINA (Series E), Apnil 2003, Vol. 46 No.2,-0001,():
-1年11月30日
In order to resolve the prevailing problems in conventional light-emitting diodes (LEDs), novel high-efficiency tunneling-regenerated multi-active-region (TRMAR) LEDs are proposed, which have such advantages as low heat generation, carrier overflow level and non-radiation recombination rate and whose quantum efficiency and the output optical power can be scaled with the number of the active regions. Experiments show that the on-axis luminous intensity of TRMAR LEDs increases linearly with the number of active regions. The novel LEDs have high quantum efficiency under low current injection and their maximum on-axis luminous intensity exceeds 5 candelas at 20 mA current injection at the peak wavelength of 625nm with a 15
high-brightness,, AlGaInP,, light-emitting diodes.,
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沈光地, Jun Deng *, Guangdi Shen, Peng Lian, Songyan Liu, Lan Li, Yanli Shi, Junmiao Wu, Nanhui Niu, Deshu Zou
Current Applied Physics 2(2002)373-378,-0001,():
-1年11月30日
The main problems of conventional multi-quantum well infrared photodetectors (QWIPs) were discussed. In order to overcome the limitations of the conventional QWIPs, such as small photocurrent, high dark current and low response speed, novel QWIPs in which photocurrent increases with the number of well were proposed. The novel structure with several wells were calculated and analyzed in detail, and successfully fabricated. The dark current lower than conventional QWIPs by about one order of magnitude was obtained, well in agreement with theoretical value. I-V characteristics of the novel QWIPs with six wells has been presented, and six related negative differential resistance regions were observed at positive bias. The absorption photocurrents of the novel QWIPs at 77 K were found to increase with well numbers, confirming the mechanism of the new structure. Furthermore, the transportation of the optoelectronic and some other problems of the QWIPs were discussed.
GaAs/, GaAlAs infrared photodetector, Tunneling regeneration, Large absorption bandwidth, Low noise
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【期刊论文】Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency
沈光地, Xia Guo, Guang-Di Shen, a) Guo-Hong Wang, Wen-Jun Zhu, Jin-Yu Du, Guo Gao, and De-Shu Zou, Yong-Hai Chen, Xiao-Yu Ma, and Liang-Hui Chen
Appl. Phys. Lett., Vol. 79, No.18, 29 October 2001,-0001,():
-1年11月30日
Tunnel-regenerated multiple-active-region (TRMAR) light-emitting diodes (LEDs) with high quantum efficiency and high brightness have been proposed and fabricated. We have proved experimentally that the efficiency of the electrical luminescence and the on-axis luminous intensity of such TRMAR LEDs scaled linearly approximately with the number of the active regions. The on-axis luminous intensity of such TRMAR LEDs with only 3μm GaP current spreading layer have exceeded 5 cd at 20 mA dc operation under 15° package. The high-quantum-efficiency and high-brightness LEDs under the low injection level were realized. © 2001 American Institute of Physics.
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沈光地, 廉鹏, 殷涛, 高国, 邹德恕, 陈昌华, 李建军, 马骁宇, 陈良惠
物理学报,2000,49(12):2374~2377,-0001,():
-1年11月30日
针对大功率半导体激光器面临的主要困难,提出并实现了一种隧道再生多有源区耦合大光腔高效大功率半导体激光器机理。该机理能有效地解决光功率密度过高引起的端面灾变性毁坏、热烧毁和光束质量差等大功率激光器存在的主要问题。采用低压金属有机化合物气相淀积方法生长了以碳和硅作为掺杂剂的GaAs隧道结、GaAs/In2GaAs 应变量子阱有源区和新型多有源区半导体激光器外延结构,并制备了高性能大功率980nm激光器件。三有源区激光器外微分量子效率达2.2,2A驱动电流下单面未镀膜激光输出功率高达2.5W。
半导体激光器,, 大功率,, 金属有机化合物气相沉积
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