吴兴龙
从事国家优先发展的硅基纳米半导体发光材料及其铌酸锂和钽酸锂晶体的微结构、声子特性和发光机理的研究
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- 姓名:吴兴龙
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学术头衔:
博士生导师, 教育部“新世纪优秀人才支持计划”入选者, 国家杰出青年科学基金获得者
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学科领域:
微电子学
- 研究兴趣:从事国家优先发展的硅基纳米半导体发光材料及其铌酸锂和钽酸锂晶体的微结构、声子特性和发光机理的研究
吴兴龙,男,1964年1月生,1995年2月在南京大学物理系获理学(凝聚态物理专业)博士学位。1997年1月在南京大学化学化工学院博士后出站,随后留校在南京大学固体微结构物理实验室和物理系工作。1996年起,曾多次在香港、加拿大、意大利等地学习和访问。主要从事国家优先发展的硅基纳米半导体发光材料及其铌酸锂和钽酸锂晶体的微结构、声子特性和发光机理的研究。在硅基发光材料的主要领域?多孔硅及其锗、硅、C60等复合材料、铒掺杂硅纳米结构、硅基纳米SiC薄膜、锗硅碳注入二氧化硅薄膜等的微结构及发光机理研究方面取得了杰出成绩;在掺钕钽酸锂、质子交换铌酸锂和钽酸锂晶体以及硅基铌酸锂和钽酸锂薄膜的晶格振动、微结构和发光特性等方面也取得了突出成绩。发表学术论文130余篇,在国际物理学四大杂志Phys. Rev. Lett.、Phys. Rev. B、Appl. Phys. Lett. 和J. Appl. Phys. 及影响因子大于3.0杂志上发表论文50余篇,特别是以第一作者和通讯作者在国际应用物理杂志《Appl. Phys. Lett.》(影响因子大于4.0)上发表论文30余篇,被同行在国际杂志上引用400余篇(不包括自引和课题组互引)。近年来承担或参与国家自然科学基金委、教育部、江苏省自然科学基金委等重点和面上项目10余项。研究项目获国家自然科学四等奖一项,江苏省科技进步一等奖和二等奖各一项,98’南京市十大科技成果奖一项。曾获教育部跨世纪优秀人才基金(2001年)和国家杰出青年基金(2002年),1999年获第六届江苏省青年科技奖。曾任南京大学固体微结构物理国家重点实验室副主任。现任江苏省光电信息功能材料重点实验室副主任,江苏省物理学会理事、国家自然科学基金项目评议人、多个国际和国内杂志审稿人。现为南京大学物理系教授、博士生导师。
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吴兴龙, X. L. Wu, S. J. Xiong, D. L. Fan, Y. Gu, and X. M. Bao, G. G. Siu and M. J. Stokes
PHYSICAL REVIEW B VOLUME 62, NUMBER 12 15 SEPTEMBER 2000-II,-0001,():
-1年11月30日
Photoluminescence (PL) spectra of as-made porous Si samples were obtained in a wide peak-wavelength range. After exposure to air or coupling with C60 molecules, the PL peak shifts to a pinning wavelength within the range of 610-630nm. This pinning wavelength is almost independent of the size of the original porous Si nanocrystallites and both redshifting and blueshifting can occur for different sizes. A self-consistent effectivemass calculation shows that the SivO binding states are responsible for the radiation of this pinning wavelength and the blueshift for the large nanocrystallites is due to the additional potential modulation within the Si nanocrystallite by the long-range Coulomb interaction of oxygen ions.
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吴兴龙, X. L. Wua a, G. G. Siu and C. L. Fu, H. C. Ong
Appl. Phys. Lett., Vol. 78, No.16, 16 April 2001,-0001,():
-1年11月30日
Photoluminescence and cathodoluminescence (CL) spectra of stoichiometric and oxygen-deficient ZnO films grown on sapphire were examined. It was found that the intensities of the green and yellow emissions depend on the width of the free-carrier depletion region at the particle surface; the thinner the width, the larger the intensity. Experimental results and spectral analyses suggest that the mechanism responsible for the green yellow! emission is the recombination of a delocalized electron close to the conduction band with a deeply trapped hole in the single ionized oxygen vacancy Voll the single negatively charged interstitial oxygen ion Oi2) center in the particle.
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吴兴龙, X. L. Wu, , Y. F. Mei, G. G. Siu, K. L. Wong, K. Moulding, M. J. Stokes, C. L. Fu, and X. M. Bao
PHYSICAL REVIEW LETTERS VOLUME 86, NUMBER 14 2 APRIL 2001,-0001,():
-1年11月30日
Si-based Er-doped Si nanostructures were fabricated for exploring efficient light emission from Er ions and Si nanocrystallites. High-resolution transmission electron microscopy observations reveal that Si nanocrystallites are spherically embedded in the SiO2 matrix. Energy-dispersive x-ray analysis indicates that the Er centers are distributed at the surfaces of nanocrystallites surrounded by the SiO2 matrix. Lowfrequency Raman scattering investigation shows that Lamb's theory can be adopted to exactly calculate the surface vibration frequencies from acoustic phonons confined in spherical Si nanocrystallites and the matrix effects are negligible.
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【期刊论文】Optical Emission from Excess Si Defect Centers in SiNanostructures
吴兴龙, X. L.Wu, , * S. J. Xiong, G.G. Siu, G. S. Huang, Y. F. Mei, Z.Y. Zhang, S. S. Deng, and C. Tan
PHYSICAL REVIEW LETTERS VOLUME 91, NUMBER 15 10 OCTOBER 2003,-0001,():
-1年11月30日
Four groups of Si nanostructures with and without-SiC nanocrystals were fabricated for clarifying the origin of a blue emission with a double-peak structure at 417 and 436nm. Spectral analyses and microstructural observations show that the blue emission is related to the existence of excess Si atoms in these Si nanostructures. The energy levels of electrons in Si nanocrystals with vacancy defects formed from the excess Si atoms are calculated and the characteristics of the obtained density of states coincide with the observed double-peak emission. The present work provides a possible mechanism of the blue emission in various Si nanostructures.
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【期刊论文】Experimental Evidence for the Quantum Confinement Effect in 3C-SiC Nanocry stallites
吴兴龙, X. L. Wu, , *, †, J.Y. Fan, T. Qiu, X. Yang, G. G. Siu, and Paul K. Chu
PHYSICAL REVIEW LETTERS 21 JANUARY 2005,-0001,():
-1年11月30日
Using electrochemical etching of a polycrystalline 3C-SiC target and subsequent ultrasonic treatment in water solution, we have fabricated suspensions of 3C-SiC nanocrystallites that luminesce. Transmission electron microscope observations show that the 3C-SiC nanocrystallites, which uniformly disperse in water, have sizes in the range of 1-6nm. Photoluminescence and photoluminescence excitation spectral examinations show clear evidence for the quantum confinement of 3C-SiC nanocrystallites with the emission band maximum ranging from 440 to 560nm. Tunable, composite polystyrene/SiC film can be made by adding polystyrene to a toluene suspension of the 3C-SiC nanocrystallites and then coating the resulting solution onto a Siwafer.
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