提示
恭喜！关注成功
期刊论文已为您找到该学者16条结果 成果回收站
上传时间
2005年02月25日
陈培毅， Guangli Luo*， Peiyu Zhu， Peiyi Chen， Zhinong Liu， Huiwang Lin， Peixin Qian
Vacuum 59(2000)927-931，-0001，（）：
-1年11月30日
An ultrahigh vacuum chemical vapor deposition system suitable for deposition of epitaxial GeSi layers has been constructed. Its reaction chamber is a rectangular quartz tube that is heated by a graphite heater. Using this system, two high-quality structures of Si/Ge0.18 Si0.82/GexSi1-x/Si nMOSFET and n-Si/p+-Ge0.2 Si0.8/n-Si HBT with controllable doping were successfully grown at 600 and 550℃.
UHV/， CVD， GeSi
-
59浏览
-
0点赞
-
0收藏
-
0分享
-
73下载
-
0
-
引用
>
