We report structural, dielectric, and ferroelectric properties of compositionally graded (Pb,La) TiO3 thin films on LaNiO3/SiO2/Si substrates, where all the films were prepared by the sol-gel technique. The crystalline orientation and surface morphology of the graded films were closely related to the deposition sequence of film layer. Upgraded film exhibited ~100! preferentially oriented growth, whereas downgraded film showed a randomly oriented growth, where the films with La content increasing or decreasing gradually along film thickness from the substrate to the top surface are called "upgraded" or "downgraded" films, respectively. The dielectric constants, for upgraded and downgraded films annealed at 650

Compositionally graded (Pb, Ca) TiO3 thin films were prepared on platinum-coated silicon substrates by a monoethanolamine-modified sol-gel technique. The crystalline orientation and surface morphology of the graded films were related to the deposition sequence of the film layer. The dielectric constants, for up-graded and down-graded films annealed at 600

Calcium modified lead titanate sol was synthesized using lead acetate trihydrate, calcium nitrate tetrahydrate and titanium tetra-n-butoxide as starting materials, methanol and ethanolamine were elected as solvent and stabilizing or complexing agent, respectively. (Pb0.76Ca0.24)-TiO3 thin films were prepared on platinum-coated silicon and fused silica substrates with the solution using the pinning method. The surface morphology and crystal structure, surface compositions and chemical tates, electrical and optical properties of the thin films were investigated. The films have good composition homogeneity and thickness uniformity. The dielectric constant and dissipation factor of 1 kHz at room temperature were found to be 280 and 0.027, respectively, for thin films with 0.5mm hickness annealed at 6008C for 1 h. The remanent polarization and coervive field were 15 mC/cm2 and 64 kV/cm, respectively. The thin

Compositionally graded (Pb,La) TiO3 thin films were prepared on platinum-coated silicon substrates by a sol-gel technique. The crystalline orientation and surface morphology of the graded films were closely related to the deposition sequence of the film layer. The dielectric constants, for up-graded and down-graded films annealed at 600