包定华
一直从事有关介电铁电薄膜和多层膜(包括超结构、超晶格)及器件应用的研究工作。
个性化签名
- 姓名:包定华
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学术头衔:
博士生导师
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学科领域:
凝聚态物理学
- 研究兴趣:一直从事有关介电铁电薄膜和多层膜(包括超结构、超晶格)及器件应用的研究工作。
包定华,男,教授,博士生导师。1999年12月毕业于西安交通大学,获微电子学与固体电子学专业博士学位,2000年4月至2003年3月在日本东京工业大学先后任JSPS特别研究员(日本学术振兴会资助)、文部科学教官/讲师(Teaching Staff),2003年4月至2004年3月在德国马普微结构物理研究所任洪堡学者(德国洪堡基金会资助)、2004年7月至2004年8月在同一机构任访问科学家(德国马普学会资助),2004年4月至今,中山大学理工学院光电材料与技术国家重点实验室任教授、博士生导师。多年来一直从事有关介电铁电薄膜和多层膜(包括超结构、超晶格)及器件应用的研究工作,已在国内外学术期刊上发表学术论文近90篇,其中SCI收录40篇,EI收录46篇,ISTP收录9篇。已发表论文被SCI他引超过380次。30多次参加在国内外举行的学术会议,其中在国际会议上作邀请报告4次,任分会主席3次。曾获全国百篇优秀博士学位论文奖,两项省部级自然科学二等奖,日本学术振兴会JSPS Research Fellowship, 德国洪堡基金会Humboldt Research Fellowship等奖励。是Appl. Phys. Lett., J. Appl. Phys., J. Am. Ceram. Soc., J. Phys. Condens. Matter, Nanotechnology, J. Phys. D: Appl. Phys.等八种重要国际学术刊物的论文审稿人。中国物理学会电介质物理专业委员会委员,中国电子学会高级会员。
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【期刊论文】Structural, dielectric, and ferroelectric properties of compositionally graded (Pb,La)
包定华, Dinghua Bao a) and Nobuyasu Mizutani Xi Yao and Liangying Zhang
,-0001,():
-1年11月30日
We report structural, dielectric, and ferroelectric properties of compositionally graded (Pb,La) TiO3 thin films on LaNiO3/SiO2/Si substrates, where all the films were prepared by the sol-gel technique. The crystalline orientation and surface morphology of the graded films were closely related to the deposition sequence of film layer. Upgraded film exhibited ~100! preferentially oriented growth, whereas downgraded film showed a randomly oriented growth, where the films with La content increasing or decreasing gradually along film thickness from the substrate to the top surface are called "upgraded" or "downgraded" films, respectively. The dielectric constants, for upgraded and downgraded films annealed at 650
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【期刊论文】Dielectric enhancement and ferroelectric anomaly of compositionally graded (Pb,Ca)
包定华, Dinghua Bao, a) Xi Yao, and Liangying Zhang
,-0001,():
-1年11月30日
Compositionally graded (Pb, Ca) TiO3 thin films were prepared on platinum-coated silicon substrates by a monoethanolamine-modified sol-gel technique. The crystalline orientation and surface morphology of the graded films were related to the deposition sequence of the film layer. The dielectric constants, for up-graded and down-graded films annealed at 600
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包定华, Dinghua Bao*, Xiaoqing Wu, Liangying Zhang, Xi Yao
,-0001,():
-1年11月30日
Calcium modified lead titanate sol was synthesized using lead acetate trihydrate, calcium nitrate tetrahydrate and titanium tetra-n-butoxide as starting materials, methanol and ethanolamine were elected as solvent and stabilizing or complexing agent, respectively. (Pb0.76Ca0.24)-TiO3 thin films were prepared on platinum-coated silicon and fused silica substrates with the solution using the pinning method. The surface morphology and crystal structure, surface compositions and chemical tates, electrical and optical properties of the thin films were investigated. The films have good composition homogeneity and thickness uniformity. The dielectric constant and dissipation factor of 1 kHz at room temperature were found to be 280 and 0.027, respectively, for thin films with 0.5mm hickness annealed at 6008C for 1 h. The remanent polarization and coervive field were 15 mC/cm2 and 64 kV/cm, respectively. The thin
(, Pb,, Ca), TiO3 thin films, Structure, Electrical and optical properties, Sol-gel technique
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【期刊论文】Dielectric and ferroelectric properties of compositionally graded (Pb,La)
包定华, Dinghua Bao a) and Nobuyasu Mizutani Xi Yao and Liangying Zhang
,-0001,():
-1年11月30日
Compositionally graded (Pb,La) TiO3 thin films were prepared on platinum-coated silicon substrates by a sol-gel technique. The crystalline orientation and surface morphology of the graded films were closely related to the deposition sequence of the film layer. The dielectric constants, for up-graded and down-graded films annealed at 600
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【期刊论文】Sol-gel-derived c-axis oriented ZnO thin films
包定华, Dinghua Bao a, b, ), Haoshuang Gu b, Anxiang Kuang b
Thin Solid Films 312 1998. 37-39,-0001,():
-1年11月30日
c-Axis oriented zinc oxide thin films were prepared by sol-gel process on fused quartz substrates. The structure, optical and electrical properties of ZnO films were investigated. Growth of the thin films strongly depends on heat-treatment conditions. The c-axis lattice constants of the thin films and the band gap are a little bigger than that of ZnO crystal. The differences between the thin film and crystal might be attributable to the grain boundaries and imperfections in thin films.
ZnO thin film, Sol-gel, Optical and electrical properties
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【期刊论文】Growth of epitaxial and oriented K(Ta 0.65 Nb o-35)O 3 thin films by sol-gel method
包定华, Dinghua Bao a, b, *, Anxiang Kuang a
Journal of Crystal Growth 171(1997)314-317,-0001,():
-1年11月30日
Epitaxial and oriented K(Tao0.65Nb0.35)O3 thin films were prepared by the sol-gei method, using metalorganic compounds. The thin films were characterized by X-ray diffraction (XRD), and reflection high energy electron diffraction (RHEED). The mechanism of orientation of the K (Ta0.65Nb0.35) O3 films is discussed.
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【期刊论文】Growth, structure, and properties of all-epitaxial ferroelectric (Bi,La)
包定华, Dinghua Bao, a) Sung Kyun Lee, Xinhua Zhu, Marin Alexe, and Dietrich Hesse
APPLIED PHYSICS LETTERS 86, 082906 (2005),-0001,():
-1年11月30日
All-epitaxial (Bi,La) 4Ti3O12 (BLT) /Pb(Zr,Ti) O3(PZT)/(Bi,La) 4Ti3O12 trilayered ferroelectric thin films were prepared on SrRuO3 sSROd-covered SrTiO3s011d substrates by pulsed-laser deposition. Epitaxial relationships were identified to be BLT (118) iPZT (011) iSrTiO3(011), and BLTf1(1)0g iPZTf100g iSrTiO3f100g. Atomic force microscopy observation of the surface showed that the upper BLT layer is composed of rod-like grains. Cross-sectional transmission electron microscopy investigations revealed ferroelectric 90
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包定华, Dinghua Bao, a Xinhua Zhu, b Marin Alexe, and Dietrich Hessec
JOURNAL OF APPLIED PHYSICS 98, 014101 (2005),-0001,():
-1年11月30日
Bi, La 4Ti3O12(BLT)/Pb (Zr,Ti) O3(PZT)/(Bi,La) 4Ti3O12 trilayered ferroelectric thin films were epitaxially grown by pulsed laser deposition onto (001) SrTiO3 (STO) substrates with and without SrRuO3 (SRO) bottom electrodes. From x-ray pole figures and electron-diffraction patterns, the epitaxial relationships between BLT, PZT, SRO, and STO were identified to be BLT (001) PZT (001) SRO (001) SrTiO3 (001); BLT (110) PZT (100) SRO (100) SrTiO3 (100). Cross-sectional transmission electron microscopy investigations revealed that 90
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【期刊论文】Structural and electrical characteristics of chemical-solution-derived (Bi,La
包定华, Dinghua Bao, a) Te-Wei Chiu, Naoki Wakiya, Kazuo Shinozaki, and Nobuyasu Mizutani
,-0001,():
-1年11月30日
Ferroelectric (Bi,La) 4Ti3O12 (BLT) thin films with different Bi2O3 template layers were prepared on Pt/Ti/SiO2/Si substrates by a chemical-solution deposition method. The BLT films with a thin Bi2O3 bottom layer and those with a thin Bi2O3 intermediate layer had a (117) preferentially oriented growth after annealing at 750°C, while those with a thin Bi2O3 upper layer and those without a Bi2O3 template layer exhibited a high c-axis orientation. The surface morphologies changed with different preferential orientations. The electrical measurements showed that the use of Bi2O3 template layers improved significantly the P–E hysteresis loops of BLT thin films. The remanent polarization (2Pr) and coercive field (Ec) values of BLT films without a Bi2O3 template layer, with a Bi2O3 upper layer, with a Bi2O3 bottom layer, and with a Bi2O3 intermediate layer annealed at 750°C were 10.8, 29.12, 26.17, and 19.67mC/cm2; 79.0, 74.5, 75.5, and 76.3kV/cm, respectively, at an applied electric field of 350 kV/cm. The dielectric constants and dissipation factors were 184, 303, 243, and 217; 0.036, 0.044, 0.039, and 0.039, respectively, at the frequency of 100 kHz, for these BLT films without a Bi2O3 template layer, with a Bi2O3 upper layer, with a Bi2O3 bottom layer, and with a Bi2O3 intermediate layer. All the capacitors with Bi2O3 template layers showed good polarization fatigue characteristics at least up to 331010 bipolar pulse cycles and excellent retention properties up to 33104s.
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