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王明华
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期刊论文
Photon-Induced Total-Internal-Reflection All-Optical Switches
IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (2) 443～445，-0001，（）：
An all-optical switch is demonstrated. The switch is based on the photon-induced carrier effect and the principle of the total internal reflection (TIR). An asymmetric Y-branch with multimode waveguides is designed and fabricated on GaAlAs/GaAs epitaxial materials. The 805-nm light is used to activate the carrier effects and generate the total-reflection effect at the branch. The device is characterized at the wavelength of 1.31m. Its extinction ratio is larger than 18.0dB when the injected optical density is 15
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