1mol%, 2mol%, 3mol%, 4mol% and 5mol% In3+ doped LiNbO3 crystals were grown by the Czochralski method, respectively. Oxidized treatment of some crystals was carried out. The infrared transmission spectra and photo-damage resistance of the samples were measured. The results showed that the OH-absorption peaks of In(3mol%):LiNbO3, In(4mol%):LiNbO3 and In(5mol%):LiNbO3 crystals were located at about 3508 cm-1, while those of In(1mol%):LiNbO3 and In(2mol%):LiNbO3 crystals were located at about 3484cm-1. When the doped In3+ concentration reached its threshold in LiNbO3 crystal, photo-damage resistance of In:LiNbO3 crystals was two orders of magnitude higher than that of pure LiNbO3 crystal. The experimental results of the second harmonic generation (SHG) showed that the phase matching temperatures of In:LiNbO3 crystals were lower than those of Zn:LiNbO3 and Mg:LiNbO3 crystals and the SHG efficiency reached 38%. Oxidization treatment was also found to make the dark trace resistance of crystals increase.