1mol%, 2mol%, 3mol%, 4mol% and 5mol% In3+ doped LiNbO3 crystals were grown by the Czochralski method, respectively. Oxidized treatment of some crystals was carried out. The infrared transmission spectra and photo-damage resistance of the samples were measured. The results showed that the OH-absorption peaks of In(3mol%):LiNbO3, In(4mol%):LiNbO3 and In(5mol%):LiNbO3 crystals were located at about 3508 cm-1, while those of In(1mol%):LiNbO3 and In(2mol%):LiNbO3 crystals were located at about 3484cm-1. When the doped In3+ concentration reached its threshold in LiNbO3 crystal, photo-damage resistance of In:LiNbO3 crystals was two orders of magnitude higher than that of pure LiNbO3 crystal. The experimental results of the second harmonic generation (SHG) showed that the phase matching temperatures of In:LiNbO3 crystals were lower than those of Zn:LiNbO3 and Mg:LiNbO3 crystals and the SHG efficiency reached 38%. Oxidization treatment was also found to make the dark trace resistance of crystals increase.

Doping Zn with the concentration of 3mol% arid In2O3 with different concentrations in Fe: LiNbO3, Zn: in:Fe:LiNbO3 crystals were grown. The infrared spectra of the crystals were measm'ed arid the mechanism of the OH-, absorption peak shifting was studied. The diffraction effceiency, response time arid photoeonduction of the crystals were measttred. The mechanisms of the photoeonduction increasing, diffraction efficiency decreasing arid resportse time shorting for those etstals were studied.

在L1Nb03中掺进3mol%、5mol%、7mol%zn0生长zn:L1Nb03晶体。测试zn:L1Nb03晶体的吸收光谱，研究zn:L1Nb03晶体吸收边紫移的机制．测试zn:L1NbO3晶体的红外光谱，研究zn(7m01%)：L1Nb03晶体0H吸收峰由3484cm1移到3530cm1的机制。测试zn:L1Nb03晶体倍频转换效率和相位匹配温度，研究zn:L1Nb03晶体倍频转换效率增强的机制。

在Fe:LiNb03中掺进3mool%和6mol%MgO，生长了Mg:Fe:LiNbO3晶体，测试了Mg:Fe:LiNbO3晶体抗光致散射能力、衍射效率、响应时间和光电导。推导响应时间与光电导之间的关系。在Fe:LiNbO3晶体中掺进6mol%的Mg3+，它的抗光致散射能力比Fe:LiNbO3晶体提高一个数量级，响应速度比Fe:LiNbO3晶体提高四倍。