The effect of Yb/Mg co-doping on the microstructure and electrical properties of BaTiO3 ceramics sintered under oxidizing, reducing andannealed conditions was investigated. XRD analyses indicated the suppression of the solubilities of the acceptor ions in BaTiO3 under thereducing and annealed conditions. DSC measurements indicated that addition of too much Yb would cause the collapse of the core-shellstructure in the BaTiO3 ceramics. The effect of sintering atmospheres on the microstructure and dielectric properties was attributed to thechange of the solubilities of the acceptor ions in this core-shell-structured material.

Pb(Zr0.52Ti0.48)O3 (PZT) films have been fabricated on Pt/Ti/SiO2/Si substrates with a new chemical solutiondeposition technique, in which each layer of PbZrO3 (PZ) and PbTiO3 (PT) was heated to 600℃ as soon as it was spincoated. The fabrication of the homogeneous PZT film was finished through the reaction between the PT and PZ layersand without post-annealing. By surveying the variations of the surface micrographs during the deposition process, anisland-column hybrid growth mode could be concluded. The low-temperature fabrication brings about enhancedfatigue resistance because of the suppression of the formation of the oxygen vacancies. Measurements of theferroelectric properties suggest a promising application for the ferroelectric memory devices.

Wolframium ions doped SrBi2Ta2O9 ceramics have been synthesized by the conventional mixed-oxide method. A sawtoothlikehysteresis loop was observed at low measuring-frequency. This phenomenon was thought to be related with the perturbationof the defect-dipole polarization under an external electrical field. A developed physical-model was derived on the basis ofsimplifying such perturbation to a simple harmonic pendulum oscillator, which combines physical considerations with thewell-known Preisach model. On the hypothesis of the simple harmonic pendulum oscillator, the included-angle between thedefect-dipole polarization and the elementary-dipole polarization can be expressed as the product of the defect-dipole relaxationvelocity and permitted relaxation time. Simulation result was excellently agreed with the observed measurement.

SrBi2Ta2O9 (SBT) thin films fabricated by pulsed-laser deposition, on the same substrates and under different deposition conditions, were found showing different textures. The influence of the deposition condition on the textureof the SBT films can be explained by the variations in two aspects. One is the interactions between the plume and thesubstrate, the other is the composition of the laser-deposited film. The relations between the texture and the ferroelectricproperty of the films were also discussed. It was found that the ferroelectric properties, such as the polarization and thecoercive field, had a strong dependence on the texture of the SBT films. These results are of interest for the fabricationof ferroelectric memories with fatigue-free SBT thin films