The strong ionic character endows all‐inorganic CsPbX3 (X = Cl, Br, I) perovskite nanocrystals (NCs) with different chemical features from classical Cd‐based NCs, especially when considering their interaction with polar solvents and surfactants. This has aroused intensive interest, but is still short of comprehensive understanding. More significantly, above characteristic may be used to improve the quality of perovskite thin films, which is crucial for the carrier transport inside optoelectronic devices. Here, an interesting recyclable dissolution–recyrstallization phenomenon of all‐inorganic pervoskite, as well as its application on room temperature (RT) self‐healing of compact and smooth carrier channels in ambient atmosphere for high‐performance PDs with high stability is reported. First, according to solubility equilibrium principle, the size of CsPbBr3 crystals can be reversibly tuned in the range of 10 nm–1 μm through washing with polar solvent or stirring with assistance of surfactants at RT. Second, such phenomenon is applied for significant film quality improvement by forming a liquid circumstance within films, which can transport matter at surface and sharp parts into the gaps, healing themselves at RT. This strategy results in large‐area, crack‐free, low‐roughness perovskite thin films. Obviously, such improvement facilitates transport and extraction of carriers in the channels of devices, which has been evidenced by the improvement of performances of the corresponding PDs at ambient condition.

Ternary oxide nanocrystals (TONs) have received growing attention for their great potential applications in optoelectronics and electrochemistry despite the current scarcity of universal, facile, and green synthesis methods. Here, we introduce a universal laser‐hydrothermal approach for various TONs and demonstrate their potential for high‐performance photodetectors (PDs) and pseudocapacitors. The obtained clean surface is derived by laser ablation in liquid (LAL) and subsequent hydrothermal growth. The LAL‐generated precursors contain many kinds of highly reactive species, including H+, OH−, metal ions, and clusters, which facilitate the fast and facile formation of various TONs in the subsequent hydrothermal process. The universality of the method is systematically proven by the synthesis of a series of TONs, including Zn2GeO4, NiCo2O4, Zn2SnO4, ZnFe2O4, ZnMnO3, and Fe2GeO4. Significantly, the absence of chemical additives, such as surfactants, guarantees highly clean surfaces, which further benefits the electron transport through the nanocrystals, and thus in the resultant devices. This is also exemplified by a Zn2GeO4‐nanorod‐based, deep‐ultraviolet PD and NiCo2O4 nanocrystal supercapacitors.

Printed flexible photodetectors based on 2D inorganic perovskites with atomic thickness show excellent photosensing with fast rise and decay response times. As‐synthesized nanosheets can easily be dispersed in various solvents, leading to large‐area, crack‐free, low‐roughness, flexible films after printing. This study demonstrates that all‐inorganic perovskite CsPbX3 nanosheets as a new class of 2D semiconductors have huge potential for flexible optoelectronic applications.

Optoelectronic applications require materials both responsive to objective photons and able to transfer carriers, so new two‐dimensional (2D) semiconductors with appropriate band gaps and high mobilities are highly desired. A broad range of band gaps and high mobilities of a 2D semiconductor family, composed of monolayer of Group 15 elements (phosphorene, arsenene, antimonene, bismuthene) is presented. The calculated binding energies and phonon band dispersions of 2D Group 15 allotropes exhibit thermodynamic stability. The energy band gaps of 2D semiconducting Group 15 monolayers cover a wide range from 0.36 to 2.62 eV, which are crucial for broadband photoresponse. Significantly, phosphorene, arsenene, and bismuthene possess carrier mobilities as high as several thousand cm2 V−1 s−1. Combining such broad band gaps and superior carrier mobilities, 2D Group 15 monolayers are promising candidates for nanoelectronics and optoelectronics.

Recently, Kovalenko and co‐workers and Li and co‐workers developed CsPbX3 (X = Cl, Br, I) inorganic perovskite quantum dots (IPQDs), which exhibited ultrahigh photoluminescence (PL) quantum yields (QYs), low‐threshold lasing, and multicolor electroluminescence. However, the usual synthesis needs high temperature, inert gas protection, and localized injection operation, which are severely against applications. Moreover, the so unexpectedly high QYs are very confusing. Here, for the first time, the IPQDs' room‐temperature (RT) synthesis, superior PL, underlying origins and potentials in lighting and displays are reported. The synthesis is designed according to supersaturated recrystallization (SR), which is operated at RT, within few seconds, free from inert gas and injection operation. Although formed at RT, IPQDs' PLs have QYs of 80%, 95%, 70%, and FWHMs of 35, 20, and 18 nm for red, green, and blue emissions. As to the origins, the observed 40 meV exciton binding energy, halogen self‐passivation effect, and CsPbX3@X quantum‐well band alignment are proposed to guarantee the excitons generation and high‐rate radiative recombination at RT. Moreover, such superior optical merits endow them with promising potentials in lighting and displays, which are primarily demonstrated by the white light‐emitting diodes with tunable color temperature and wide color gamut.