Inspired by rich physics and functionalities of graphenes, scientists have taken an intensive interest in two-dimensional (2D) crystals of h-BN (analogue of graphite, so-called “white” graphite). Recent calculations have predicted the exciting potentials of BN nanoribbons in spintronics due to tunable magnetic and electrical properties; however no experimental evidence has been provided since fabrication of such ribbons remains a challenge. Here, we show that few- and single-layered BN nanoribbons, mostly terminated with zigzag edges, can be produced under unwrapping multiwalled BN nanotubes through plasma etching. The interesting stepwise unwrapping and intermediate states were observed and analyzed. Opposed to insulating primal tubes, the nanoribbons become semiconducting due to doping-like conducting edge states and vacancy defects, as revealed by structural analyses and ab initio simulations. This study paves the way for BN nanoribbon production and usage as functional semiconductors with a wide range of applications in optoelectronics and spintronics.

High concentrations of defects are introduced into nanoscale ZnO through non‐equilibrium processes and resultant blue emissions are comprehensively analyzed, focusing on defect origins and broad controls. Some ZnO nanoparticles exhibit very strong blue emissions, the intensity of which first increase and then decrease with annealing. These visible emissions exhibit strong and interesting excitation dependences: 1) the optimal excitation energy for blue emissions is near the bandgap energy, but the effective excitation can obviously be lower, even 420 nm (2.95 eV < Eg = 3.26 eV); in contrast, green emissions can be excited only by energies larger than the bandgap energy; and, 2) there are several fixed emitting wavelengths at 415, 440, 455 and 488 nm in the blue wave band, which exhibit considerable stability in different excitation and annealing conditions. Mechanisms for blue emissions from ZnO are proposed with interstitial‐zinc‐related defect levels as initial states. EPR spectra reveal the predominance of interstitial zinc in as‐prepared samples, and the evolutions of coexisting interstitial zinc and oxygen vacancies with annealing. Furthermore, good controllability of visible emissions is achieved, including the co‐emission of blue and green emissions and peak adjustment from blue to yellow.

Laser ablation of solid targets in the liquid medium can be realized to fabricate nanostructures with various compositions (metals, alloys, oxides, carbides, hydroxides, etc.) and morphologies (nanoparticles, nanocubes, nanorods, nanocomposites, etc.). At the same time, the post laser irradiation of suspended nanomaterials can be applied to further modify their size, shape, and composition. Such fabrication and modification of nanomaterials in liquid based on laser irradiation has become a rapidly growing field. Compared to other, typically chemical, methods, laser ablation/irradiation in liquid (LAL) is a simple and “green” technique that normally operates in water or organic liquids under ambient conditions. Recently, the LAL has been elaborately developed to prepare a series of nanomaterials with special morphologies, microstructures and phases, and to achieve one‐step formation of various functionalized nanostructures in the pursuit of novel properties and applications in optics, display, detection, and biological fields. The formation mechanisms and synthetic strategies based on LAL are systematically analyzed and the reported nanostructures derived from the unique characteristics of LAL are highlighted along with a review of their applications and future challenges.

Graphene with a sp2-honeycomb carbon lattice has drawn a large amount of attention due to its excellent properties and potential applications in many fields. Similar to the structure of graphene, two-dimensional semiconductors are its two-dimensional and isostructural counterparts based on the typical layer-structured semiconductors, such as boron nitride (h-BN) and transition metal dichalcogenides (e.g. MoS2 and WS2), whose layers are bound by weak van der Waals forces. Unlike the semi-metal features of graphene, the two-dimensional semiconductors are natural semiconductors with thicknesses on the atomic scale. When one of the dimensions is extremely reduced, the two-dimensional semiconductors exhibit some unique properties, such as a transition from indirect to direct semiconductor properties, and hence have great potential for applications in electronics, energy storage, sensors, catalysis and composites, which arise both from the dimension-reduced effect and from the modified electronic structure. In this feature article, recent developments in the synthesis, properties and applications of two-dimensional semiconductors are discussed. The reported virtues and novelties of two-dimensional semiconductors are highlighted and the current problems in their developing process are clarified, in addition to their challenges and future prospects.

Highly epitaxial ZnO nanowire‐on‐nanoplate structures as efficient and transferable electron field emitters are reported here. Well‐faceted ZnO nanoplates can be used as efficient substrates for the epitaxial growth of nanowires with a sharp and high‐quality interface, which significantly improves its field emitter performance. Because of its scalable preparation, high performance and facile transfer, the novel material is of high potential for applications in various optoelectronic devices.