Due to the high hole mobility both in the surface strained Si and buried relaxed SiGe channels, we successfully fabricated a novel strained Siyrelaxed SiGe channel PMOSFET on the heterostructure strained Siyrelaxed SiGeystrained Siyrelaxed SiGe buffer layerygrading Si Ge layer, grown by home-made UHVyCVD system, which is commonly used in 1yx x the 'buried' SiGe NMOSFET.This device is easier to integrate with SiGe NMOSFET to form SiGe CMOS, than strained SiGe channel PMOSFET. Then the process is presented. With Vgs=3.5V, the maximum saturated transconductance is found to be twice as large as that of the control Si PMOS, and approximates to that of a traditional strained SiGe channel PMOS.

采用U HV/ CVD 方法在Si (100) 衬底上生长了多层的自组织Ge 量子点，用AFM对量子点的形貌和尺寸分布进行了研究。材料的低温(10 K) PL 谱测试表明，由于量子点的三维限制作用，跟体材料的Ge 相比，Ge 量子点的NP 峰表现出87 meV的蓝移。在此基础上，流水制作了p-i-n 结构的量子点红外探测器。室温下，测得其在1. 31μm 和1. 55μm 的响应度分别为0. 043mA/ W 和0. 001 4 mA/ W，覆盖了体Si 探测器所不能达到的响应范围。

was studied as a function of reactor fast neutron radiation fluence. After neutron irradiation, the collector current Ic and the current gain β decrease, and the base current Ib increases generally for SiGe HBT. The higher the neutron irradiation fluence is, the larger Ib increases. For conventional Si BJT, Ic and Ib increase as well as β decreases much larger than SiGe HBT at the same fluence. It is shown that SiGe HBT has a larger anti-radiation threshold and better anti-radiation performance than Si BJT. The mechanism of performance changes induced by irradiation was preliminarily discussed.