We present a numerical method capable of reproducing the densification process from the so-called random loose to dense packing of uniform spheres under vertical vibration. The effects of vibration amplitude and frequency are quantified, and the random close packing is shown to be achieved only if both parameters are properly controlled. Two densification mechanisms are identified: pushing filling by which the contact between spheres is maintained and jumping filling by which the contact between particles is periodically broken. In general, pushing filling occurs when the vibration intensity is low and jumping filling becomes dominant when the vibration intensity is high.

The growth of {100}-oriented CVD diamond film under two modifications of J-B-H model at low substrate temperatures was simulated by using a revised KMC method at atomic scale. The results were compared both in Cl-containing systems and in C-H system as follows: (1) Substrate temperature can produce an important effect both on film deposition rate and on surface roughness; (2) Aomic Cl takes an active role for the growth of diamond film at low temperatures; (3) {100}-oriented diamond film cannot deposit under single carbon insertion mechanism, which disagrees with the predictions before; (4) The explanation of the exact role of atomic Cl is not provided in the simulation results.