为了提高CVI法制备C/SiC复合材料的致密化速度，提出了连续同步CVI（CSCVI）法制备C布增韧SiC基复合材料的技术路线，制备了C/SiC复合材料，并观察了其微观结构。实验结果表明,在CSCVI工艺中，SiC基体沉积速度越快，材料的致密化程度越大且致密效果越好。同时，SiC基体沉积速度只由沉积温度与MTS（CH3SiCl3）流量控制，使工艺的可操作性增强,工艺参数可在较大范围内变动。

以CH3SiCl3为源物质，H2为载气，Ar气为稀释气体，研究了沉积温度和沉积气氛压力对SiC沉积形貌的影响。应用晶体成核一长大理论和SiC沉积热力学理论，解释了SiC沉积的各种形貌。研究表明：降低系统压力和提高沉积温度，能减小SiC在气相中形核所需的最大能量，促进形核。SiC沉积热力学随沉积条件的改变决定了SiC沉积形貌的改变。

In order to improve the uniformity of both the concentration of gaseous reagent and the deposition of matrix within micro-pores during the chemical vapor infiltration (CVI) process, a calculation modeling of gas phase diffusion transport within micro-pores was established. Taken CH3SiCl3as precursor for de positing SiC as example, the diffusion coefficient, decomposing reaction rate, concentration within the reactor, and concentration distributing profiling of MTS within micro-pore were accounted, respectively. The results indicate that, increasing the ratio of diffusion coefficient to decomposition rate constant of precursor MTS is propitious to decrease the densification gradient of parts, and decreasing the aspect ratio (L/D) of micro-pore is favorable to make the concentration uniform within pores.

采用模拟刹车制动方法研究“温压-原位反应法”制备的CöC-SiC复合材料在不同制动速度下的摩擦磨损性能，分别用光学显微镜和扫描电子显微镜对摩擦表面及其磨屑形貌进行观察，用X射线衍射仪分析磨屑成分。结果表明：摩擦系数随制动速度提高先升高而后降低，在制动速度为10m/s时达到最大值0.46，且当制动速度超过20m/s时产生高频振动；随着制动速度提高，磨屑愈被碾磨变细，且磨损量随之增大，在制动速度为28m/s时线性磨损量急剧升至8.75Lm；C/C-SiC复合材料在中等能载（1.5kJ/cm2）条件下具有优良的摩擦磨损性能。