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李树玮, Kazuto Koike, Takashi Tanaka, Shuwei Li, Mitsuaki Yano*
Journal of Crystal Growth 227-228(2001)671-676,-0001,():
-1年11月30日
This paper describes molecular beam epitaxial growth of high-quality CdTe films in the (100)-orientation on (100)-GaAs substrates. It is revealed by a photoluminescence measurement that a defect-related emission band is dominant when the CdTe film is directly grown on the GaAs substrate. After applying a postgrowth annealing, however, the crystalline quality of the CdTe film is improved to exhibit a reduced defect-related emission band and an intense emission peak from excitons. Although the CdTe surface after annealing is rough due to the formation of thermal etchpits, a MnTe capping prior to the annealing is found to be effective to keep the surface smooth. The usefulness of this method is demonstrated by applying the annealed MnTe/CdTe film as a buffer layer for high-quality CdTe overgrowth.
A3., Molecular beam epitaxy, B1., Cadmium compounds, B2., Semiconducting Ⅱ-Ⅵ materials
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李树玮, Shuwei Li a, *, Kazuto Koike b, Shigehiko Sasa b, Masataka Inoue b, Mitsuaki Yano b, Yixin Jin c
Solid State Communications 126(2003)563-566,-0001,():
-1年11月30日
Quantum dots (QDs), which capture and emit carriers like a giant trap, are studied using deep level transient spectroscopy (DLTS). The electrons and holes in the QDs are emitted from the relevant energy levels to the conduction and valence bands, respectively, of the barrier layers with increasing temperature. The thermal emission energies from the QDs are related to their initial energy levels. In this paper, five-period vertically stacked InAs QDs in the barrier layers of a field-effect type structure are measured. The results agree well with capacitance-voltage and photoluminescence measurements. In addition, the dependence of DLTS signal on the pulse voltage and light illumination is presented. The results prove that DLTS is a powerful tool for the study of the electronic structure of QDs.
A., Semiconductors, B., Epitaxy, D., Recombination and trapping
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李树玮, Shuwei Li a, *, Kazuto Koike b, Mitsuaki Yano b, Yixin Jin a
Physica B 325(2003)41-45,-0001,():
-1年11月30日
A quantum dot (QD) can capture and emit carriers, the behavior of which is similar to that of a giant trap, and stacked QDs with a size-controlled growth show a strong tendency to align vertically. The discrete energy level properties of the self-assembled vertically stacked InAs QDs in Al0.5Ga0.5As are studied by means of deep level transient spectroscopy (DLTS) and photoluminescence (PL) spectroscopy. The DLTS measurement displays the spectra of hole and electron discrete energy levels as positive and negative peaks, respectively, which illustrates that the DLTS is a capable tool to study the optical and electrical properties of the QDs. The PL emission peaks are found to completely correspond to the DLTS signals.
Photoluminescence, Self-assembled quantum dots, Optical properties, Deep level transient spectroscopy
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李树玮
,-0001,():
-1年11月30日
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