中国科技论文在线

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2011年09月05日

【期刊论文】Two kinds of crystalline state of InSb epilayers on GaAs substrates by metalorganic chemical vapor deposition

李树玮

，-0001，（）：

-1年11月30日

摘要

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2009年04月12日

【期刊论文】Threshold voltage shift characterization of vertically stacked InAs nanodots in field-effect transistor

李树玮， Shuwei Li*， Kazuto Koike， Hisayoshi Komai， Mitsuaki Yano

Journal of Crystal Growth 227-228(2001)1166-1170，-0001，（）：

-1年11月30日

摘要

An Al0.5Ga0.5As/GaAs heterojunction field-effect transistor which consists of InAs nanodots in the barrier layer and a GaAs quantum well channel is grown by molecular beam epitaxy, and the device performance and the electron transport from the quantum well to the nanodots are studied. These InAs nanodots are grown by self-assembling in a vertically stacked form, and their optical and electrical properties are characterized by photoluminescence and capacitance-voltage measurements. The electrical injection of electrons confined at the nanodots produces a persistent electron trapping which yields a memory function in the device performance, showing a potential application for roomtemperature operation.

ctures， A3.， Molecular beam epitaxy， B1.， Nanomaterials， B2.， Semiconducting Ⅲ-Ⅴ materials， B3.， Field effect transistors

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2009年04月12日

【期刊论文】Study of quaternary GaInAsSballoy by scanning transmission electron microscopy

李树玮， Shuwei Li a， *， Kazuto Koike a， Folkert Schulze-Kraasch b， Erich Kubalek b

Journal of Crystal Growth 223(2001)456-460，-0001，（）：

-1年11月30日

摘要

Quaternary GaInAsSb epilayer was grown by MOCVD on GaSb substrate, and the crystalline state and mismatch relaxation are studied by scanning transmission electron microscopy (STEM), bright field images and convergent beam electron diffraction (CBED) patterns. Mismatch dislocations are generated from the interface, and Lomer 908 dislocations induce surface ridges, and the shift of Kikuchi lines can determine relaxation quantitatively which is similar to the value calculated from electron probe microanalysis.

A1.， Characterization， A1.， Crystal structure， A1.， Defects， A3.， Metalorganic vapor phase epitaxy， B2.， Semiconducting Ш–Vmaterials， B3.， Heterojunction semiconductor devices