Quaternary GaInAsSb epilayer was grown by MOCVD on GaSb substrate, and the crystalline state and mismatch relaxation are studied by scanning transmission electron microscopy (STEM), bright field images and convergent beam electron diffraction (CBED) patterns. Mismatch dislocations are generated from the interface, and Lomer 908 dislocations induce surface ridges, and the shift of Kikuchi lines can determine relaxation quantitatively which is similar to the value calculated from electron probe microanalysis.

This paper describes molecular beam epitaxial growth of high-quality CdTe films in the (100)-orientation on (100)-GaAs substrates. It is revealed by a photoluminescence measurement that a defect-related emission band is dominant when the CdTe film is directly grown on the GaAs substrate. After applying a postgrowth annealing, however, the crystalline quality of the CdTe film is improved to exhibit a reduced defect-related emission band and an intense emission peak from excitons. Although the CdTe surface after annealing is rough due to the formation of thermal etchpits, a MnTe capping prior to the annealing is found to be effective to keep the surface smooth. The usefulness of this method is demonstrated by applying the annealed MnTe/CdTe film as a buffer layer for high-quality CdTe overgrowth.

This letter describes the memory effect of an AlGaAs/GaAs heterojunction field-effect transistor that contains InAs nanodots in the barrier layer. The device experiences a shift of threshold gate voltage, as a function of the amount of the electrons trapped in the nanodots. These trapped electrons can be injected by applying a positive gate voltage and be erased by a visible light illumination at negative gate bias. Although the shift of the threshold gate voltage volatilizes with the time after the memory programing operation, a considerable part of the shift is retained even after 100 h at room temperature.