By two-stage solid phase reaction, a series of Mg2Si1−xGex continuous solid solutions were successfully synthesized at low temperature (823 K) for the first time. The product was single-phased without any oxide or carbide and the particle size was substantially reduced than that of the raw powders. X-ray diffraction (XRD) techniques were used to explore the products' phases and differential thermal analysis (DTA) to the changing tendency of heat quantity during the solid phase reaction. The influence of Ge substitution to Mg2Si1−xGex was illustrated by the changes of lattice parameter and the existence of the complete solid solubility between Mg2Si and Mg2Ge was established, too. © 2001 Elsevier Science B.V. All rights reserved.

Doped with Sb and Te, Mg2Si based compounds were prepared respectively by solid state reaction at 823K for 8h, Effects of dopants of Sb and Te on the strcuture and thermoelectric properties of the compounds were investigated. By calculating the values of the electrical conductivity for Sb-doped sample, the mecha-nism of electric conduction at 625K is different, The figure of merit for sample doped with 0.4wt% Te at 500K is 2.4×10-3W/mK2, and it reaches 3.3×10-3W/mK2 at 650K for the sample doped with 0.5wt% Sb. The values are more than 1.4 times and 2.3 times of the pure Mg2Si sample.

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采用固相反应法在823K温度下分别制备出了掺入0.1%和0.4%（摩尔分数，下同）的Mg2Si化合物，并对掺Te对化合物结构和热电特性的影响进行了研究。结果表明：通过对Mg2Si基体的掺杂可以大幅度提高Mg2Si基热电材料的整体热电性能。掺入0.4%Te试样的优值系数在500K时达到2.4×10 -3W/(m·K2)，比未掺杂的Mg2Si试样提高了1.4倍以上。

用Mg粉和Si粉通过固相反应在823K时保温8h合成了Mg2Si粉末；并通过外加Ag粉用二次固相反应在相同条件下合成了Mg2Si基热电固溶体。采用放电等离子烧结法（SPS），以掺杂Ag后的固溶体为原料制备出了p型Mg2Si基热电村料。研究了Ag掺杂量对Mg2Si村料热电性能的影响。结果表明：随着掺杂Ag的摩尔分数的增大，村料的Seebeck系数（即温差电动势）和电导率均有增大的趋势，但热导率变化不大。温度为513K时，掺杂Ag的摩尔分数为15×10-3的试样的优值系数Z值和优值系数与温度之积ZT均为最大，分别为18.2×10-6/K和0.01。