中国科技论文在线

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2011年05月13日

【期刊论文】A Facile Sulfur Vapor Assisted Reaction Method To Grow Boron Nitride Nanorings at Relative Low Temperature

郝霄鹏， Xiaopeng Hao， * Yongzhong Wu， Jie Zhan， Jiaxiang Yang， Xiangang Xu， and Minhua Jiang

J. Phys. Chem. B 2005, 109, 19188-19190，-0001，（）：

-1年11月30日

Boron nitride (BN) nanorings were synthesized using a sulfur vapor assisted solid-state method at 600℃. The rings had typical diameters of 100-300 nm, and the shells were 5-20 nm thick and about 50 nm wide. On the basis of the characterization of X-ray powder diffraction pattern (XRD), X-ray photoelectron spectroscopy (XPS), and Fourier transformation infrared spectroscopy (FTIR) measurement, the as-prepared product was pure-phase hexagonal BN. High-resolution transmission electron microscopy (HRTEM) images proved that the nanorings were formed through the coiling of the (002) planes of hexagonal BN. A possible growth process for BN nanorings is suggested.

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2011年05月13日

【期刊论文】Synthesis of GaN nanospindles via a facile solid-state reaction route

郝霄鹏， Xiaopeng Hao a， *， Jie Zhan a， Yongzhong Wu a， Suwen Liu b， Xiangang Xu a， Minhua Jiang a

Journal of Crystal Growth 280(2005)341-345，-0001，（）：

-1年11月30日

摘要

Gallium nitride (GaN) nanospindles have been synthesized via a solid-state reaction at a low-temperature condition. X-ray powder diffraction (XRD), Raman spectrum and high-resolution transmission electron microscopy (HRTEM) revealed that the synthesized GaN crystallized in a hexagonal structure and displaying spindly particles morphology has an average diameter of 100nm and length of 400nm X-ray photoelectron spectroscopy (XPS) of the sample gave the atomic ratio of Ga and N of 1.04:1. Room-temperature photoluminescence (PL) spectrum showed that the as-prepared product had a peak emission at 372 nm. The possible formation mechanism of the wurtzite GaN is briefly discussed.

A1.， X-ray diffraction， B1.， Inorganic compounds， B1.， Nanomaterials， B1.， Nitrides

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2011年05月13日

【期刊论文】Synthesis of Cubic Boron Nitride at Low-Temperature and Low-Pressure Conditions

郝霄鹏， X. P. Hao， † D. L. Cui， *， † G. X. Shi， † Y. Q. Yin， † X. G. Xu， † J. Y. Wang， † M. H. Jiang， † X. W. Xu， ‡ Y. P. Li， ‡ and B. Q. Sun§

Chem. Mater., Vol.13, No.8, 2001，-0001，（）：

-1年11月30日

摘要

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2011年05月13日

【期刊论文】A novel hydrothermal route to synthesize boron nitride nanocrystals

郝霄鹏， Xiaopeng Hao*， Shouyi Dong， Wei Fang， Jie Zhan， Ling Li， Xiangang Xu， Minhua Jiang

Inorganic Chemistry Communications 7(2004)592-594，-0001，（）：

-1年11月30日

摘要

Boron nitride (BN) nanocrystals have been synthesized by a novel hydrothermal method. The results of measurement indicated that the sample is a mixture of orthorhombic (o) and cubic (c) BN nanocrystals.

Boron nitride， Nanocrystals， Hydrothermal synthesis

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2011年05月13日

【期刊论文】Synthesis of cubic boron nitride by structural induction effect

郝霄鹏， Xiaopeng Hao*， Jie Zhan， Wei Fang， Deliang Cui， Xiangang Xu， Minhua Jiang

Journal of Crystal Growth 270(2004)192-196，-0001，（）：

-1年11月30日

摘要

A novel structural induction method has been developed to synthesize cubic boron nitride (cBN) nanocrystals by the reaction of Li3N with BBr3 at very soft conditions (250℃ and 0.3-0.5Mpa). The experimental results show that at reaction temperature of 250℃, the reaction product is only hexagonal boron nitride without cubic gallium phosphide (GaP) nanocrystals being added into the reaction mixture. On the contrast, when cubic GaP nanocrystals were added to the mixture, nearly pure cBN can be obtained under the same reaction conditions. This phenomenon indicated that there was a structural induction effect of GaP to the formation of cBN. As the temperature increased, GaP nanocrystals decomposed rapidly and the structural induction effect disappeared, almost no cBN can be obtained at high temperature. Furthermore, the nucleation and growth of cBN nanocrystals were analyzed by the heterogenous nucleation theory.

A1.， Nucleation， A1.， X-ray diffraction， B1.， Inorganic compounds， B1.， Nanomaterials， B1.， Nitrides

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