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2005年04月15日

【期刊论文】Leveraging deep photonic band gaps in photonic crystal impurity bands

兰胜, Sheng Lan, a), Satoshi Nishikawa, and Osamu Wada

Appl. Phys. Lett., Vol. 78, No.15, 9 April 2001,-0001,():

-1年11月30日

摘要

Photonic band gaps can be generated in the impurity bands of photonic crystals formed by periodically placed defects. Even slight periodic modulation of the properties of these defects can open up very deep band gaps in the impurity bands. This phenomenon originates from the concentration of electromagnetic field at the defect regions, making electromagnetic wave extremely sensitive to the small changes of the defects. A dynamical photonic band gap in the impurity band created by a control light, provides a mechanism for constructing high-efficiency optical switches.

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2005年04月15日

【期刊论文】Ultrafast response of photonic crystal atoms with Kerr nonlinearity to ultrashort optical pulses

兰胜, Sheng Lana), Achanta Venu Gopal, Kyozo Kanamoto, and Hiroshi Ishikawa

Appl. Phys. Lett., Vol. 84, No.25, 21 June 2004,-0001,():

-1年11月30日

摘要

We investigate the response of photonic crystal (PC) atoms with Kerr nonlinearity to the excitation of ultrashort optical pulses. Surprisingly, it is found that PC atoms with sharp resonant peaks in frequency spectrum (or with large quality factors) can respond to ultrashort pulses very rapidly when Kerr nonlinearity is introduced. More interestingly, the response time under high-power densities can be even shorter than the duration of the pump pulse. It is revealed that the nonlinearity induced broadening of dynamical frequency spectrum is responsible for the ultrafast response time, implying the possibility of ultrafast all-optical switching.

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2005年04月15日

【期刊论文】Two-Dimensional In0:4Ga0:6As/GaAs Quantum Dot Superlattices Realized by Self-Organized Epitaxial Growth

兰胜, Sheng LAN, Kouichi AKAHANE, Kee-Youn JANG, Takahiro KAWAMURA, Yoshitaka OKADA, Mitsuo KAWABE, Tetsuya NISHIMURA, and Osamu WADA

Jpn. J. Appl. Phys. Vol. 38 (1999) pp. 2934-2943,-0001,():

-1年11月30日

摘要

We report on the realization of two-dimensional (2D) In0:4Ga0:6As/GaAs quantum dot superlattices (QDSLs) by selforganized epitaxial growth. The conditions for the formation of extended states or minibands are analyzed by treating QD arrays as disordered systems. Ordered quantum dot (QD) arrays are fabricated on GaAs (311)B substrates. High density and small size are achieved by decreasing the growth temperature. A large red shift of the photoluminescence (PL) peak energy and a dramatic narrowing of the linewidth are found when the dots become smaller and closer. The exciton coherence length in the high-density ordered QD array is confirmed to be much larger than the QD diameter by PL decay time measurements and by using beryllium impurities as scattering centers. As a comparison, the incoherent exciton motion dominated by nonresonant tunneling is discussed. The transition from coherent to incoherent, including the intermediate state, and the localization of excitons are demonstrated by various mechanisms.

self-organized growth, quantum dot superlattices, coherent and incoherent, lateral coupling, extended and localized states, photoluminescence

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2005年04月15日

【期刊论文】Dynamics of nonlinear photonic crystal atoms characterized by numerical simulations in a pump-probe scheme

兰胜, Sheng Lan, a), Xiong-Wen Chen, Jing-Dong Chen, and Xu-Sheng Lin, Achanta Venu Gopal

APPLIED PHYSICS LETTERS 86, 131112 (2005),-0001,():

-1年11月30日

摘要

We investigate the dynamics of nonlinear photonic crystal sPCd atoms by use of numerical simulations in a pump-probe scheme based on a finite-difference time-domain technique. A two-dimensional nonlinear PC atom with multimode is intentionally employed for the numerical simulations. The use of the multimode PC atom makes it possible that the pump and probe waves are set at different frequencies, ensuring the clear identification of the dynamics of the nonlinear PC atom. The physical model for the dynamics of nonlinear PC atoms has been established and very good agreement between the analytical and simulation results has been achieved.

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2005年04月15日

【期刊论文】Formation of extended states in disordered two-dimensional In0.4Ga0.6As’GaAsÑ311Ö B quantum dot superlattices

兰胜, Sheng Lan, a) Kouichi Akahane, Hai-Zhi Song, Yoshitaka Okada, and Mitsuo Kawabe Tetsuya Nishimura, b) S. Nishikawa, and Osamu Wada

J. Appl. Phys., Vol. 88, No.1, 1 July 2000,-0001,():

-1年11月30日

摘要

Formation of extended states or minibands in two-dimensional (2D)In0.4Ga0.6As/GaAs (311) Bquantum dot superlattices (QDSLs) is directly demonstrated in time-resolved photoluminescence measurements. At a low excitation density of 1W/cm2, photoluminescence transients with; 15 ps rise time and; 25 ps decay time are observed. Both rise and decay times are found to increase with increasing excitation density. The excitons in 2D QDSLs exhibit different relaxation and recombination behaviors as compared to those in quantum wells and quantum dots. A physical model treating 2D QDSLs as disordered systems containing localized and extended states can successfully interpret all of the experimental observations.

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    华南师范大学,广东

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