Compositionally graded (Pb, Ca) TiO3 thin films were prepared on platinum-coated silicon substrates by a monoethanolamine-modified sol-gel technique. The crystalline orientation and surface morphology of the graded films were related to the deposition sequence of the film layer. The dielectric constants, for up-graded and down-graded films annealed at 600

Bi, La 4Ti3O12(BLT)/Pb (Zr,Ti) O3(PZT)/(Bi,La) 4Ti3O12 trilayered ferroelectric thin films were epitaxially grown by pulsed laser deposition onto (001) SrTiO3 (STO) substrates with and without SrRuO3 (SRO) bottom electrodes. From x-ray pole figures and electron-diffraction patterns, the epitaxial relationships between BLT, PZT, SRO, and STO were identified to be BLT (001) PZT (001) SRO (001) SrTiO3 (001); BLT (110) PZT (100) SRO (100) SrTiO3 (100). Cross-sectional transmission electron microscopy investigations revealed that 90

Compositionally graded (Pb,La) TiO3 thin films were prepared on platinum-coated silicon substrates by a sol-gel technique. The crystalline orientation and surface morphology of the graded films were closely related to the deposition sequence of the film layer. The dielectric constants, for up-graded and down-graded films annealed at 600

c-Axis oriented zinc oxide thin films were prepared by sol-gel process on fused quartz substrates. The structure, optical and electrical properties of ZnO films were investigated. Growth of the thin films strongly depends on heat-treatment conditions. The c-axis lattice constants of the thin films and the band gap are a little bigger than that of ZnO crystal. The differences between the thin film and crystal might be attributable to the grain boundaries and imperfections in thin films.