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【期刊论文】Dielectric enhancement and ferroelectric anomaly of compositionally graded (Pb,Ca)
包定华, Dinghua Bao, a) Xi Yao, and Liangying Zhang
,-0001,():
-1年11月30日
Compositionally graded (Pb, Ca) TiO3 thin films were prepared on platinum-coated silicon substrates by a monoethanolamine-modified sol-gel technique. The crystalline orientation and surface morphology of the graded films were related to the deposition sequence of the film layer. The dielectric constants, for up-graded and down-graded films annealed at 600
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【期刊论文】Dielectric and ferroelectric properties of compositionally graded (Pb,La)
包定华, Dinghua Bao a) and Nobuyasu Mizutani Xi Yao and Liangying Zhang
,-0001,():
-1年11月30日
Compositionally graded (Pb,La) TiO3 thin films were prepared on platinum-coated silicon substrates by a sol-gel technique. The crystalline orientation and surface morphology of the graded films were closely related to the deposition sequence of the film layer. The dielectric constants, for up-graded and down-graded films annealed at 600
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包定华, Dinghua Bao, a) Liangying Zhang, and Xi Yao
,-0001,():
-1年11月30日
Compositionally step-varied (Pb, Ca) TiO3 thin films were prepared on platinum-coated silicon substrates by a monoethanolamine-modified sol-gel technique. The dielectric constant and dissipation factor were found to be 342 and 0.019, respectively, for thin films of 0.6mm in thickness annealed at 550
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【期刊论文】Composition gradient optimization and electrical characterization of (Pb,Ca
包定华, Dinghua Bao a) Liangying Zhang and Xi Yao
,-0001,():
-1年11月30日
Compositionally graded (Pb, Ca) TiO3 thin films were prepared by a monoethanolamine-modified sol-gel technique on platinum-coated silicon substrates at the annealing temperature of 600
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【期刊论文】Band-gap energies of sol-gel-derived SrTiO3 thin films
包定华, Dinghua Bao a) Xi Yao Naoki Wakiya, Kazuo Shinozaki, and Nobuyasu Mizutani
,-0001,():
-1年11月30日
Band-gap energies of sol-gel-derived SrTiO3 thin films were studied in terms of annealing temperature and film thickness. The band-gap energies of highly crystallized films were comparable to those of single crystals reported, whereas for poor-crystallized films, their band-gap energy values were much larger than those of single crystals. The larger band-gap energy shift was believed to be mainly due to both quantum size effect and existence of amorphous phase in thin films. The band-gap energies also showed a strong dependence on film thickness. There was a critical film thickness (~200 nm), above which the films had band-gap energies close to those of crystals or bulks, but below that, the values shifted largely, which can be attributed to the influence of crystallinity of thin films. Such a thickness effect of band-gap energy should be of high interest in optical device applications.
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