Bi, La 4Ti3O12(BLT)/Pb (Zr,Ti) O3(PZT)/(Bi,La) 4Ti3O12 trilayered ferroelectric thin films were epitaxially grown by pulsed laser deposition onto (001) SrTiO3 (STO) substrates with and without SrRuO3 (SRO) bottom electrodes. From x-ray pole figures and electron-diffraction patterns, the epitaxial relationships between BLT, PZT, SRO, and STO were identified to be BLT (001) PZT (001) SRO (001) SrTiO3 (001); BLT (110) PZT (100) SRO (100) SrTiO3 (100). Cross-sectional transmission electron microscopy investigations revealed that 90

Homogeneous LaNiO3 thin films were grown on thermally oxidized silicon (SiO2/Si) substrates by a sol-gel technique, for the subsequent sol-gel deposition of (Pb, La) TiO3 thin films, under the assumption that the structural and compositional compatibility between ferroelectric films and bottom electrodes could lead to enhanced electrical properties of ferroelectric thin films. In this work, the LaNiO3 films served three functions: the first was used as bottom electrodes for the fabrication of integrated ferroelectric devices on Si due to their low resistivity; the second was used as a seeding layer, promoting perovskite phase formation due to their structural compatibility with ferroelectric films; and the third was to suppress the composition diffusion between ferroelectric films and bottom electrodes due to their composition compatibility. The experimental results demonstrated that (Pb, La) TiO3 films prepared on the LaNiO3/SiO2/Si substrates had excellent electrical properties. The dielectric constant and dielectric loss were 1468 and 0.033, respectively. The dielectric constant is rather high among the values reported for (Pb, La) TiO3 thin films. The remanent polarization and coercive field were 4.24mC/cm2 and 23.2kV/cm, respectively.

All-epitaxial (Bi,La) 4Ti3O12 (BLT) /Pb(Zr,Ti) O3(PZT)/(Bi,La) 4Ti3O12 trilayered ferroelectric thin films were prepared on SrRuO3 sSROd-covered SrTiO3s011d substrates by pulsed-laser deposition. Epitaxial relationships were identified to be BLT (118) iPZT (011) iSrTiO3(011), and BLTf1(1)0g iPZTf100g iSrTiO3f100g. Atomic force microscopy observation of the surface showed that the upper BLT layer is composed of rod-like grains. Cross-sectional transmission electron microscopy investigations revealed ferroelectric 90

Epitaxial and oriented K(Tao0.65Nb0.35)O3 thin films were prepared by the sol-gei method, using metalorganic compounds. The thin films were characterized by X-ray diffraction (XRD), and reflection high energy electron diffraction (RHEED). The mechanism of orientation of the K (Ta0.65Nb0.35) O3 films is discussed.

Pb (Zr,Ti) O3 (PZT) thin films were prepared on (111) Pt-coated Si substrates by a chemical solution deposition method using zirconyl heptanoate as zirconium source instead of commonly used zirconium alkoxides. The effects of processing conditions on the microstructure and electrical properties of the PZT thin films were investigated. The texture of the PZT thin films could be changed by selecting different heat-treatment methods. Orientation-dependent electrical properties, including dielectric constant, polarization, and coercive field, were examined. The randomly oriented PZT thin films annealed at 600C for 0.5h showed a well-defined ferroelectric hysteresis loop with a remanent polarization of 18mC/cm2 and a coercive field of 74kV/cm.