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期刊论文
Numerical and Experimental Characterization of Single-and Double-Gate Race-Track-Shaped Field Emitter Structures
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 45, NO.2, FEBRUARY 1998，-0001，（）：
In this paper, numerical and experimental characterization of new single-and double-gate race-track-shaped field emitter structures are reported. The race-track-shaped edge emission is used to provide good uniformity and large field emission current density, and the double-gate control is used to provide small turn-on voltage and minimum gate current. Experimental results show that the turn-on voltage of the singlegate structure is approximately 100V, and the field emission current density is approximately 2.4A/cm2. Furthermore, field emission characteristics of the single- and double-gate structures are numerically simulated. Results show that turn-on voltage of the double-gate structure is reduced by 30% and ratio of anode current to gate current is increased by 36 times compared to that of the single-gate structure at a gate voltage of 350V.
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