通过参数调整和工艺简化，制备了应变Si沟道的SiGeNMOS晶体管。该器件利用弛豫SiGe缓冲层上的应变Si层作为导电沟道，相比于体Si器件在1V栅压下电子迁移率最大可提高48.5%。

An ultrahigh vacuum chemical vapor deposition system suitable for deposition of epitaxial GeSi layers has been constructed. Its reaction chamber is a rectangular quartz tube that is heated by a graphite heater. Using this system, two high-quality structures of Si/Ge0.18 Si0.82/GexSi1-x/Si nMOSFET and n-Si/p+-Ge0.2 Si0.8/n-Si HBT with controllable doping were successfully grown at 600 and 550℃.

Due to the high hole mobility both in the surface strained Si and buried relaxed SiGe channels, we successfully fabricated a novel strained Siyrelaxed SiGe channel PMOSFET on the heterostructure strained Siyrelaxed SiGeystrained Siyrelaxed SiGe buffer layerygrading Si Ge layer, grown by home-made UHVyCVD system, which is commonly used in 1yx x the 'buried' SiGe NMOSFET.This device is easier to integrate with SiGe NMOSFET to form SiGe CMOS, than strained SiGe channel PMOSFET. Then the process is presented. With Vgs=3.5V, the maximum saturated transconductance is found to be twice as large as that of the control Si PMOS, and approximates to that of a traditional strained SiGe channel PMOS.

Resonant tunneling diodes (RTD) are considered as one of the most promising band-gap engineering heterostructure devices for negative differential resistance (NDR) feature in the current–voltage trace. In this letter, a p-well SiGe/Si RTD is proposed and demonstrated. Its I V relationship is obtained by Keithley 4200 semiconductor parameter analyzer, and NDR feature can be observed obviously at room temperature. The obtained peak current density is 45.92 kA/cm2, and peak to valley current ratio (PVCR) is 2.21. Considering the influence of series resistance on the I V relationship, the DC-parameter of RTD was extracted from the experimental data. This work is helpful to improve the performance of RTD and design of RTD-based circuits.

采用U HV/ CVD 方法在Si (100) 衬底上生长了多层的自组织Ge 量子点，用AFM对量子点的形貌和尺寸分布进行了研究。材料的低温(10 K) PL 谱测试表明，由于量子点的三维限制作用，跟体材料的Ge 相比，Ge 量子点的NP 峰表现出87 meV的蓝移。在此基础上，流水制作了p-i-n 结构的量子点红外探测器。室温下，测得其在1. 31μm 和1. 55μm 的响应度分别为0. 043mA/ W 和0. 001 4 mA/ W，覆盖了体Si 探测器所不能达到的响应范围。